公开(公告)号：US20170271547A1

公开(公告)日：2017-09-21

申请号：US15475817

申请日：2017-03-31

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen TSAI ,  Chen OU ,  Chi Ling LEE ,  Chi Shiang HSU

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L21/784 ,  H01L33/02 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62

Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.

公开(公告)号：US20190027643A1

公开(公告)日：2019-01-24

申请号：US16143573

申请日：2018-09-27

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen TSAI ,  Chen OU ,  Chi Ling LEE ,  Chi Shiang HSU

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/02 ,  H01L21/784 ,  H01L33/22 ,  H01L33/62 ,  H01L21/78

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L21/784 ,  H01L33/02 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

公开(公告)号：US20160043277A1

公开(公告)日：2016-02-11

申请号：US14874077

申请日：2015-10-02

Applicant: EPISTAR CORPORATION

Inventor： Yi Lin GUO ,  Chen OU ,  Chi Ling LEE ,  Wei Han WANG ,  Hung Chih YANG ,  Chi Hung WU

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: An LED manufacturing method includes steps of: providing a substrate including a first surface; forming a first portion of a first semiconductor layer on the first surface in a first atmosphere including a first carrier gas; and forming a second portion of the first semiconductor layer on the first portion in a second atmosphere including a second carrier gas; wherein a plurality of first cavities is formed on a surface of the first portion during forming the first portion; and wherein the plurality of first cavities is transformed to a plurality of second cavities during forming the second portion, and one of the second cavities includes a first inclined surface and a second inclined surface above the first inclined surface.

Abstract translation: LED制造方法包括以下步骤：提供包括第一表面的基板; 在包括第一载气的第一气氛中，在所述第一表面上形成第一半导体层的第一部分; 以及在包括第二载气的第二气氛中在所述第一部分上形成所述第一半导体层的第二部分; 其中在形成所述第一部分期间，在所述第一部分的表面上形成多个第一空腔; 并且其中所述多个第一空腔在形成所述第二部分期间被变换为多个第二空腔，并且所述第二空腔中的一个包括第一倾斜表面和位于所述第一倾斜表面上方的第二倾斜表面。

公开(公告)号：US20180158980A1

公开(公告)日：2018-06-07

申请号：US15872202

申请日：2018-01-16

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen TSAI ,  Chen OU ,  Chi Ling LEE ,  Chi Shiang HSU

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/02 ,  H01L33/20 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L21/784 ,  H01L33/02 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

公开(公告)号：US20140183581A1

公开(公告)日：2014-07-03

申请号：US13731887

申请日：2012-12-31

Applicant: EPISTAR CORPORATION

Inventor： Chi Hung Wu ,  Chen Ou ,  Chi Ling LEE ,  Wei Han WANG ,  Hui Tang SHEN ,  Yi Lin GUO ,  Hung Chih YANG

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: A light-emitting device comprises a substrate; a first semiconductor layer formed on the substrate; a light-emitting layer on the first semiconductor layer; and a second semiconductor layer having a rough surface formed on the light-emitting layer, wherein the rough surface comprises a plurality of cavities randomly distributed on the rough surface, and one of the plurality of cavities has a substantially hexagonal shape viewed from top and a curved sidewall viewed from cross-section.

Abstract translation: 发光装置包括基板; 形成在所述基板上的第一半导体层; 在所述第一半导体层上的发光层; 以及第二半导体层，其具有形成在所述发光层上的粗糙表面，其中所述粗糙表面包括随机分布在所述粗糙表面上的多个空腔，并且所述多个空腔中的一个具有从顶部观察的大致六边形形状， 从横截面看弯曲的侧壁。