公开(公告)号：US20140319559A1

公开(公告)日：2014-10-30

申请号：US13870008

申请日：2013-04-25

Applicant: EPISTAR CORPORATION

Inventor： Yi-Lin Guo ,  Chen Ou ,  Chi-Ling Lee ,  Wei-Han Wang ,  Hui-Tang Shen ,  Chi-Hung Wu ,  Hung-Chih Yang

IPC: H01L33/22 ,  H01L33/12

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/12

Abstract: A light-emitting device includes: a light-emitting stack having an upper surface having a first surface roughness less than 0.2 nm; and an as-cut wafer comprising an irregularly uneven surface facing the light-emitting stack and having a second surface roughness greater than 0.5 μm.

Abstract translation: 发光装置包括：具有第一表面粗糙度小于0.2nm的上表面的发光叠层; 以及包括面向发光叠层的不规则凹凸表面并具有大于0.5μm的第二表面粗糙度的切割晶片。

公开(公告)号：US09112101B2

公开(公告)日：2015-08-18

申请号：US13870008

申请日：2013-04-25

Applicant: EPISTAR CORPORATION

Inventor： Yi-Lin Guo ,  Chen Ou ,  Chi-Ling Lee ,  Wei-Han Wang ,  Hui-Tang Shen ,  Chi-Hung Wu ,  Hung-Chih Yang

IPC: H01L33/00 ,  H01L21/76 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/12

Abstract: A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 μm; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.

Abstract translation: 一种制造发光器件的方法，包括以下步骤：提供具有大于0.5μm的表面粗糙度的不规则凹凸表面的切割晶片; 并且通过外延生长方法在所述切割晶片的不规则凹凸表面上形成发光叠层，并且所述发光叠层包括表面粗糙度小于0.2nm的上表面; 其中在提供切割晶片的步骤之后和在切割晶片的不规则凹凸表面上形成发光叠层的步骤之前没有图案化或粗加工工艺。