Susceptor
    2.
    发明授权

    公开(公告)号:US09738974B2

    公开(公告)日:2017-08-22

    申请号:US14790631

    申请日:2015-07-02

    CPC classification number: C23C16/4585

    Abstract: A susceptor, comprising: a base part; multiple holders distributed on the base part for accommodating wafers; an inner ring connected to the base part; and an outer ring detachably connected to the base part and separated from the inner ring; wherein the inner ring and the outer ring separate the holders from one another. A susceptor, comprising: a base part; multiple holders distributed on the base part for accommodating wafers; a cover comprising a first surface facing the base part, and a second surface opposite to the first surface; a first positioning structure; a second positioning structure formed in the first surface; and a third positioning structure formed in the base part, wherein the cover connects to the base part by associating the first positioning structure with the second positioning structure and the third positioning structure.

    Light-emitting device manufacturing method
    5.
    发明授权
    Light-emitting device manufacturing method 有权
    发光元件的制造方法

    公开(公告)号:US09112101B2

    公开(公告)日:2015-08-18

    申请号:US13870008

    申请日:2013-04-25

    CPC classification number: H01L33/22 H01L33/0079 H01L33/12

    Abstract: A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 μm; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.

    Abstract translation: 一种制造发光器件的方法,包括以下步骤:提供具有大于0.5μm的表面粗糙度的不规则凹凸表面的切割晶片; 并且通过外延生长方法在所述切割晶片的不规则凹凸表面上形成发光叠层,并且所述发光叠层包括表面粗糙度小于0.2nm的上表面; 其中在提供切割晶片的步骤之后和在切割晶片的不规则凹凸表面上形成发光叠层的步骤之前没有图案化或粗加工工艺。

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