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公开(公告)号:US20140319559A1
公开(公告)日:2014-10-30
申请号:US13870008
申请日:2013-04-25
Applicant: EPISTAR CORPORATION
Inventor: Yi-Lin Guo , Chen Ou , Chi-Ling Lee , Wei-Han Wang , Hui-Tang Shen , Chi-Hung Wu , Hung-Chih Yang
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/12
Abstract: A light-emitting device includes: a light-emitting stack having an upper surface having a first surface roughness less than 0.2 nm; and an as-cut wafer comprising an irregularly uneven surface facing the light-emitting stack and having a second surface roughness greater than 0.5 μm.
Abstract translation: 发光装置包括:具有第一表面粗糙度小于0.2nm的上表面的发光叠层; 以及包括面向发光叠层的不规则凹凸表面并具有大于0.5μm的第二表面粗糙度的切割晶片。
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公开(公告)号:US09738974B2
公开(公告)日:2017-08-22
申请号:US14790631
申请日:2015-07-02
Applicant: Epistar Corporation
Inventor: Yuan-Hung Huang , Chung-Kuei Huang , Ai-Fa Lee , Shang-Po Chien , Meng-Tu Chiang , Chi-Ling Lee , Ying-Chun Chuang , Wen-Hsien Lo
IPC: C23C16/458
CPC classification number: C23C16/4585
Abstract: A susceptor, comprising: a base part; multiple holders distributed on the base part for accommodating wafers; an inner ring connected to the base part; and an outer ring detachably connected to the base part and separated from the inner ring; wherein the inner ring and the outer ring separate the holders from one another. A susceptor, comprising: a base part; multiple holders distributed on the base part for accommodating wafers; a cover comprising a first surface facing the base part, and a second surface opposite to the first surface; a first positioning structure; a second positioning structure formed in the first surface; and a third positioning structure formed in the base part, wherein the cover connects to the base part by associating the first positioning structure with the second positioning structure and the third positioning structure.
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公开(公告)号:US12288831B2
公开(公告)日:2025-04-29
申请号:US18535955
申请日:2023-12-11
Applicant: EPISTAR CORPORATION
Inventor: Chia-Chen Tsai , Jia-Liang Tu , Chi-Ling Lee
IPC: H01L33/00 , H01L21/66 , H01L21/683 , H01L25/075 , H01L33/62
Abstract: A manufacturing method for a LED is disclosed. The method includes: providing a substrate with an upper surface; preparing a plurality of LEDs on the upper surface; wherein the upper surface is divided into a plurality of zones, the plurality of LEDs composes a plurality of LED groups, and each of the LED group is disposed in one of the plurality of zones; preparing a testing circuit to electrically connecting the plurality of LEDs in one of the plurality of LED groups; testing the plurality of LEDs in the one of the plurality of LED groups by the testing circuit to obtain photoelectrical characteristics of the plurality of LEDs in the one of the plurality of LED groups; and presenting the photoelectric characteristics in an image.
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4.
公开(公告)号:US11862751B2
公开(公告)日:2024-01-02
申请号:US17169057
申请日:2021-02-05
Applicant: EPISTAR CORPORATION
Inventor: Chia-Chen Tsai , Jia-Liang Tu , Chi-Ling Lee
IPC: H01L33/00 , H01L21/683 , H01L21/66 , H01L33/62 , H01L25/075
CPC classification number: H01L33/0095 , H01L21/6835 , H01L22/22 , H01L25/0753 , H01L33/62 , H01L2221/68354 , H01L2221/68368 , H01L2933/0066
Abstract: A manufacturing method for an LED includes: providing a substrate having an upper surface divided into a plurality of zones; a LED group formed on each of the zones and wherein: a plurality of the LED groups includes a first LED group; and the LEDs of the first LED group include a defective LED; forming a testing circuit on the substrate to electrically connect the LEDs; testing the first LED group by the testing circuit; recording a position of the defective LED; providing a carrier; and performing one of the following steps by the position of the defective LED: removing the defective LED from the substrate and then transferring the other LEDs in the first LED group to the carrier; transferring the other LEDs other than the defective LED in the first LED group to the carrier; or transferring the LEDs to the carrier and repairing it on the carrier.
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公开(公告)号:US09112101B2
公开(公告)日:2015-08-18
申请号:US13870008
申请日:2013-04-25
Applicant: EPISTAR CORPORATION
Inventor: Yi-Lin Guo , Chen Ou , Chi-Ling Lee , Wei-Han Wang , Hui-Tang Shen , Chi-Hung Wu , Hung-Chih Yang
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/12
Abstract: A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 μm; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.
Abstract translation: 一种制造发光器件的方法,包括以下步骤:提供具有大于0.5μm的表面粗糙度的不规则凹凸表面的切割晶片; 并且通过外延生长方法在所述切割晶片的不规则凹凸表面上形成发光叠层,并且所述发光叠层包括表面粗糙度小于0.2nm的上表面; 其中在提供切割晶片的步骤之后和在切割晶片的不规则凹凸表面上形成发光叠层的步骤之前没有图案化或粗加工工艺。
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