公开(公告)号：US10038128B2

公开(公告)日：2018-07-31

申请号：US15702286

申请日：2017-09-12

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi-ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/62 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.