公开(公告)号：US10804435B2

公开(公告)日：2020-10-13

申请号：US15686314

申请日：2017-08-25

Applicant: EPISTAR CORPORATION

Inventor： Chang-Tai Hisao ,  I-Lun Ma ,  Hao-Yu Chen ,  Shu-Fen Hu ,  Ru-Shi Liu ,  Chih-Ming Wang ,  Chun-Yuan Chen ,  Yih-Hua Renn ,  Chien-Hsin Wang ,  Yung-Hsiang Lin

IPC: H01L33/42 ,  H01L33/32 ,  H01L33/06 ,  H01L33/44 ,  F21K9/232 ,  F21V29/77 ,  F21V5/04 ,  F21K9/238 ,  F21K9/237 ,  F21Y115/10

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.