公开(公告)号：US12218282B2

公开(公告)日：2025-02-04

申请号：US18091035

申请日：2022-12-29

Applicant: EPISTAR CORPORATION

Inventor： Aurelien Gauthier-Brun ,  Chao-Hsing Chen ,  Chang-Tai Hsaio ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  Jia-Kuen Wang ,  Yung-Hsiang Lin

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

Abstract: A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.

公开(公告)号：US10804435B2

公开(公告)日：2020-10-13

申请号：US15686314

申请日：2017-08-25

Applicant: EPISTAR CORPORATION

Inventor： Chang-Tai Hisao ,  I-Lun Ma ,  Hao-Yu Chen ,  Shu-Fen Hu ,  Ru-Shi Liu ,  Chih-Ming Wang ,  Chun-Yuan Chen ,  Yih-Hua Renn ,  Chien-Hsin Wang ,  Yung-Hsiang Lin

IPC: H01L33/42 ,  H01L33/32 ,  H01L33/06 ,  H01L33/44 ,  F21K9/232 ,  F21V29/77 ,  F21V5/04 ,  F21K9/238 ,  F21K9/237 ,  F21Y115/10

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

公开(公告)号：US10553759B2

公开(公告)日：2020-02-04

申请号：US16035299

申请日：2018-07-13

Applicant: EPISTAR CORPORATION

Inventor： Aurelien Gauthier-Brun ,  Chao-Hsing Chen ,  Chang-Tai Hsaio ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  Jia-Kuen Wang ,  Yung-Hsiang Lin

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40

Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.

公开(公告)号：US10304993B1

公开(公告)日：2019-05-28

申请号：US15863255

申请日：2018-01-05

Applicant: EPISTAR CORPORATION

Inventor： Yung-Hsiang Lin ,  Wei-Chih Peng

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/10 ,  H01L33/06

Abstract: The present invention discloses a light-emitting device and the manufacturing method thereof. The light-emitting device comprises: a substrate including a protrusion part and a base part; a lattice buffer layer formed on the substrate and including a first region substantially right above the protrusion part and a second region substantially right above the base part, wherein the first region includes a recess therein; a light-emitting stack formed on the lattice buffer layer and the recess; and electrodes formed on and electrically connected to the light-emitting stack.