公开(公告)号：US11227975B2

公开(公告)日：2022-01-18

申请号：US16549822

申请日：2019-08-23

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Fan-Lei Wu ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Hung-Ta Cheng ,  Chih-Chaing Yang ,  Yao-Ru Chang ,  Yi Hsiao ,  Hsiang Chang

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.