公开(公告)号：US11227978B2

公开(公告)日：2022-01-18

申请号：US16680214

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Cheng-Long Yeh ,  Ko-Yin Lai ,  Yao-Ru Chang ,  Yung-Fu Chang ,  Yi Hsiao ,  Shih-Chang Lee

IPC: H01L33/62 ,  H01L33/38

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

公开(公告)号：US11227975B2

公开(公告)日：2022-01-18

申请号：US16549822

申请日：2019-08-23

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Fan-Lei Wu ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Hung-Ta Cheng ,  Chih-Chaing Yang ,  Yao-Ru Chang ,  Yi Hsiao ,  Hsiang Chang

IPC: H01L33/20

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

公开(公告)号：US10461223B2

公开(公告)日：2019-10-29

申请号：US16128604

申请日：2018-09-12

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Hsin-Chan Chung ,  Hung-Ta Cheng ,  Wen-Luh Liao ,  Shih-Chang Lee ,  Chih-Chiang Lu ,  Yi-Ming Chen ,  Yao-Ning Chan ,  Chun-Fu Tsai

IPC: H01L33/38 ,  H01L33/30

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .

公开(公告)号：US10312407B2

公开(公告)日：2019-06-04

申请号：US16041398

申请日：2018-07-20

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/60 ,  H01L33/64

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US10749077B2

公开(公告)日：2020-08-18

申请号：US16227253

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06 ,  H01L33/20

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US10580937B2

公开(公告)日：2020-03-03

申请号：US16228575

申请日：2018-12-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06 ,  H01L33/20

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

公开(公告)号：US11894481B2

公开(公告)日：2024-02-06

申请号：US17510522

申请日：2021-10-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh Lin ,  Shiuan-Leh Lin ,  Yung-Fu Chang ,  Shih-Chang Lee ,  Chia-Liang Hsu ,  Yi Hsiao ,  Wen-Luh Liao ,  Hong-Chi Shih ,  Mei-Chun Liu

IPC: H01L31/02 ,  H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

CPC classification number: H01L31/167 ,  A61B5/02141 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/14546 ,  A61B5/14552 ,  G01J3/10 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/03046

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.

公开(公告)号：US11121285B2

公开(公告)日：2021-09-14

申请号：US16680207

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Hui-Fang Kao ,  Yi-Tang Lai ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei Chun Liu ,  Yao-Ru Chang ,  Yi Hisao

IPC: H01L33/14 ,  H01L33/40 ,  H01L25/075

Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.

公开(公告)号：US10032954B2

公开(公告)日：2018-07-24

申请号：US15591544

申请日：2017-05-10

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng Yu ,  Ching-Yuan Tsai ,  Yao-Ru Chang ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Cheng-Hsing Chiang ,  Kuo-Feng Huang ,  Hsu-Hsuan Teng ,  Hung-Ta Cheng ,  Yung-Fu Chang

IPC: H01L21/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US09583680B2

公开(公告)日：2017-02-28

申请号：US14939458

申请日：2015-11-12

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Meng-Chyi Wu ,  Chong-Long Ho ,  Ai-Sen Liu

IPC: H01L33/44 ,  H01L33/42 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/44 ,  H01L31/022483 ,  H01L31/02963 ,  H01L31/1844 ,  H01L31/1884 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0025 ,  Y02E10/544 ,  Y02P70/521

Abstract: An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.

Abstract translation: 公开了一种光电装置，其包括底座和底座上的透明导电结构。 基底还包括发光器件，并且透明导电结构在透明导电氧化物层上包括透明导电氧化物层和钝化层。 透明导电氧化物层的材料包括诸如ZnO的透明导电金属氧化物。 此外，透明导电金属氧化物还包括杂质，例如载体例如 镓。