公开(公告)号：US11935981B2

公开(公告)日：2024-03-19

申请号：US17364175

申请日：2021-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih Su ,  Chia-Hsiang Chou ,  Wei-Chih Peng ,  Wen-Luh Liao ,  Chao-Shun Huang ,  Hsuan-Le Lin ,  Shih-Chang Lee ,  Mei Chun Liu ,  Chen Ou

IPC: H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/101 ,  H01L31/12

CPC classification number: H01L31/055 ,  H01L25/167 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/125

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

公开(公告)号：US20210408310A1

公开(公告)日：2021-12-30

申请号：US16917223

申请日：2020-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih Su ,  Chao-Shun Huang ,  Shiuan-Leh Lin ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei-Chun Liu

IPC: H01L31/055 ,  H01L31/0304 ,  H01L31/0224 ,  H01L25/16

Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.

公开(公告)号：US20200303377A1

公开(公告)日：2020-09-24

申请号：US16893348

申请日：2020-06-04

Applicant: National Applied Research Laboratories ,  EPISTAR Corporation

Inventor： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/20

Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

公开(公告)号：US09847450B2

公开(公告)日：2017-12-19

申请号：US14520067

申请日：2014-10-21

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Chih-Chiang Lu ,  Shih-Chang Lee ,  Hung-Ta Cheng ,  Hsin-Chan Chung ,  Yi-Chieh Lin

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/20 ,  H01L33/42

CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

公开(公告)号：US09768351B2

公开(公告)日：2017-09-19

申请号：US14475210

申请日：2014-09-02

Applicant: EPISTAR CORPORATION

Inventor： Tsung-Hsien Liu ,  Rong-Ren Lee ,  Shih-Chang Lee

IPC: H01L33/30 ,  H01L33/08 ,  H01L33/06 ,  H01L33/02 ,  H01L33/04

CPC classification number: H01L33/08 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/305

Abstract: An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.

公开(公告)号：US20160284939A1

公开(公告)日：2016-09-29

申请号：US15176890

申请日：2016-06-08

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/30

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.

Abstract translation: 提供了一种光电器件。 光电子器件包括：用于发光的光电子系统; 光电子系统上的多个接触区域并且彼此分离; 和多个手指在光电子系统上并且与多个接触区域相对; 其中所述多个接触区域中的第一接触区域位于两个相邻的指状物之间，并且所述第一接触区域和所述相邻指状物之一之间的第一距离在所述两个相邻指状物之间的第二距离的5％至50％之间。

公开(公告)号：US12230736B2

公开(公告)日：2025-02-18

申请号：US17211331

申请日：2021-03-24

Applicant: EPISTAR CORPORATION

Inventor： Jian-Zhi Chen ,  Yen-Chun Tseng ,  Hui-Fang Kao ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yun-Chung Chou ,  Shih-Chang Lee ,  Chen Ou

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/36 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

公开(公告)号：US11894481B2

公开(公告)日：2024-02-06

申请号：US17510522

申请日：2021-10-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh Lin ,  Shiuan-Leh Lin ,  Yung-Fu Chang ,  Shih-Chang Lee ,  Chia-Liang Hsu ,  Yi Hsiao ,  Wen-Luh Liao ,  Hong-Chi Shih ,  Mei-Chun Liu

IPC: H01L31/02 ,  H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

CPC classification number: H01L31/167 ,  A61B5/02141 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/14546 ,  A61B5/14552 ,  G01J3/10 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/03046

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.

公开(公告)号：US20230074033A1

公开(公告)日：2023-03-09

申请号：US17940361

申请日：2022-09-08

Applicant: EPISTAR CORPORATION

Inventor： Wei-Jen Hsueh ,  Shih-Chang Lee ,  Chen Ou ,  Po-Chou Pan ,  Wen-Luh Liao

IPC: H01L27/15 ,  H01L27/144

Abstract: An optoelectronic device includes a substrate, a first semiconductor stack located on the substrate, a second semiconductor stack located on the first semiconductor stack, and a first optical structure located between the first semiconductor stack and the second semiconductor stack. The first semiconductor stack includes a first semiconductor layer, a second semiconductor layer and a first active layer which emits or absorbs a first light with a first wavelength. The second semiconductor stack includes a third semiconductor layer, a fourth semiconductor layer and a second active layer which emits or absorbs a second light with a second wavelength smaller than the first wavelength. The first optical structure includes a plurality of first parts and a plurality of second parts. The first parts and the second parts are alternately arranged by a first period along a horizontal direction parallel to the substrate.

公开(公告)号：US11588072B2

公开(公告)日：2023-02-21

申请号：US17089377

申请日：2020-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yen-Chun Tseng ,  Kuo-Feng Huang ,  Shih-Chang Lee ,  Ming-Ta Chin ,  Shih-Nan Yen ,  Cheng-Hsing Chiang ,  Chia-Hung Lin ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Jui-Che Sung ,  Shih-Hao Cheng

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/14 ,  H01L33/08 ,  H01L33/02

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.