公开(公告)号：US20230317912A1

公开(公告)日：2023-10-05

申请号：US18330562

申请日：2023-06-07

Applicant: EPISTAR CORPORATION

Inventor： Jhih Yong YANG ,  Hsin Ying WANG ,  De Shan KUO

IPC: H01L33/62 ,  H01L33/20

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L2933/0066

Abstract: A light-emitting diode, includes a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a transparent conductive layer formed on the semiconductor stack and electrically connected to the second semiconductor layer; an insulating layer formed on the transparent conductive layer, comprising a plurality of first opening; a first electrode formed on the insulating layer, electrically connected to the first semiconductor layer; and a second electrode formed on the insulating layer, comprising a second pad and a second extension extending from the second pad along a long side of the light-emitting diode toward the first electrode, electrically connected to the transparent conductive layer, wherein the second extension comprise a plurality of node parts and a plurality of linking parts alternately disposed, and in a plan view, the node part has a width smaller than that of the second pad and lager than that of the linking part and that of the first opening; wherein the second extension does not overlap the first electrode; and wherein the plurality of node parts contacts the transparent conductive layer through the plurality of the first openings.

公开(公告)号：US20210202794A1

公开(公告)日：2021-07-01

申请号：US17136776

申请日：2020-12-29

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung LIN ,  De Shan KUO

IPC: H01L33/08 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/62

Abstract: A method of manufacturing a light-emitting element, includes: providing a base having an upper surface and a lower surface; forming a semiconductor stack on the upper surface; removing part of the semiconductor stack to form an isolation region surrounding the semiconductor stack; forming a dielectric stack covering the semiconductor stack and the isolation region; and applying a first laser having a first wavelength to irradiate the base along the isolation region; wherein the dielectric stack has a reflectance of 10%-50% and/or a transmittance of 50%-90% for the first wavelength.

公开(公告)号：US20160276535A1

公开(公告)日：2016-09-22

申请号：US15074193

申请日：2016-03-18

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chin LIN ,  Ying-Chieh CHEN ,  Chi-Shiang HSU ,  De Shan KUO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/20 ,  H01L33/0095 ,  H01L33/025

Abstract: A light emitting device, includes: a substrate, including a top surface, a bottom surface, a first side surface connecting the top surface and the bottom surface, a first group of deteriorated region, and a second group of deteriorated region; and a semiconductor stack formed on the top surface of the substrate, wherein the first side surface includes a first group of convex region and a first group of concave region, wherein the first group of convex region includes the first group of deteriorated region, and the first group of concave region includes the second group of deteriorated region.

Abstract translation: 一种发光器件，包括：基板，包括顶表面，底表面，连接顶表面和底表面的第一侧表面，第一组恶化区域和第二组恶化区域; 以及形成在所述基板的上表面上的半导体堆叠，其中所述第一侧面包括第一组凸区域和第一组凹区域，其中所述第一组凸区域包括所述第一组劣化区域， 第一组凹区包括第二组恶化区。

公开(公告)号：US20130292720A1

公开(公告)日：2013-11-07

申请号：US13937510

申请日：2013-07-09

Applicant: EPISTAR CORPORATION

Inventor： De Shan KUO ,  Tsun Kai KO

IPC: H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L31/035227 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/10 ,  H01L33/12 ,  H01L33/145 ,  H01L51/5275 ,  H01S2304/12

Abstract: An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the substrate; a first protection layer formed on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate; a first buffer layer formed on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and at least one first hollow component formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer and the ratio of the height and the width of the first hollow component is 1/5-3.

Abstract translation: 一种光电子器件，包括：衬底; 形成在基板上的多个第一半导体棒，与基板接触，并露出基板的第一表面的部分; 形成在多个第一半导体棒的侧壁上的第一保护层和基板的第一表面的暴露部分; 形成在所述多个所述第一半导体棒上的第一缓冲层，其中所述第一缓冲层具有与所述第一表面相对的第一表面和第二表面，所述多个所述第一半导体棒与所述第一表面直接接触; 并且形成在第一半导体棒，基板的第一表面和第一缓冲层的第一表面之间的第一中空部件和第一中空部件的高度和宽度的比率为1 / 5-3 。

公开(公告)号：US20130119429A1

公开(公告)日：2013-05-16

申请号：US13731783

申请日：2012-12-31

Applicant: Epistar Corporation

Inventor： Jui Hung YEH ,  Chun Kai WANG ,  Wei Yu YEN ,  Yu Yao LIN ,  Chien Fu SHEN ,  De Shan KUO ,  Ting Chia KO

IPC: H01L33/36

CPC classification number: H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L2933/0016

Abstract: A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.

Abstract translation: 发光元件包括：发光层，包括：第一半导体层; 形成在所述第一半导体层上的有源层; 以及形成在所述有源层上的第二半导体层; 通过所述第二半导体层形成的凹陷结构，所述有源层在所述第一半导体层中延伸，其中所述第一半导体层包括由所述凹部结构限定的接触区域; 第一电极结构，包括在第一半导体层的接触区域上的第一接触部分和从第一接触部分向第一半导体层侧向延伸的第二接触部分; 以及形成在第二半导体层和有源层的侧表面上的绝缘层，以使第二半导体层和有源层与第一接触部分绝缘。