公开(公告)号：US20240014352A1

公开(公告)日：2024-01-11

申请号：US18370649

申请日：2023-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

CPC classification number: H01L33/385 ,  H01L33/10 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/0753 ,  H01L33/36

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20230135799A1

公开(公告)日：2023-05-04

申请号：US18091035

申请日：2022-12-29

Applicant: EPISTAR CORPORATION

Inventor： Aurelien GAUTHIER-BRUN ,  Chao-Hsing CHEN ,  Chang-Tai HSAIO ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  Jia-Kuen WANG ,  Yung-Hsiang LIN

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/18

Abstract: A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.

公开(公告)号：US20210202571A1

公开(公告)日：2021-07-01

申请号：US17138335

申请日：2020-12-30

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Yong-Yang CHEN

IPC: H01L27/15

Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emitting unit without covering the first insulating layer opening on the second light-emitting unit; a first electrode pad covering a part of the plurality of the light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units.

公开(公告)号：US20220384687A1

公开(公告)日：2022-12-01

申请号：US17827622

申请日：2022-05-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yi-Hung LIN ,  Kuo-Ching HUNG ,  Chi-Shiang HSU

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/44

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.

公开(公告)号：US20200044116A1

公开(公告)日：2020-02-06

申请号：US16529370

申请日：2019-08-01

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46 ,  H01L33/00

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20240421262A1

公开(公告)日：2024-12-19

申请号：US18743847

申请日：2024-06-14

Applicant: EPISTAR CORPORATION

Inventor： Yen-Liang KUO ,  Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Chung-Hao WANG

IPC: H01L33/46

Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface connected to the first semiconductor layer; a contact electrode covering the second semiconductor layer and comprising an upper surface; a reflective structure comprising a reflective structure opening having a first side surface and a second side surface; a connection layer covering the reflective structure; and a metal reflective layer covering the connection layer; wherein in a cross-sectional view of the light-emitting device, a first portion of a projection of the first side surface to the upper surface of the contact electrode comprises a first length, a second portion of a projection of the second side surface to the upper surface of the contact electrode comprises a second length, and the first length is smaller than the second length.

公开(公告)号：US20230197904A1

公开(公告)日：2023-06-22

申请号：US18113344

申请日：2023-02-23

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

CPC classification number: H01L33/385 ,  H01L33/10 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/0753 ,  H01L33/36

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20190019919A1

公开(公告)日：2019-01-17

申请号：US16035299

申请日：2018-07-13

Applicant: EPISTAR CORPORATION

Inventor： Aurelien GAUTHIER-BRUN ,  Chao-Hsing CHEN ,  Chang-Tai HSAIO ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  Jia-Kuen WANG ,  Yung-Hsiang LIN

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44 ,  H01L33/40 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46

Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.

公开(公告)号：US20160276535A1

公开(公告)日：2016-09-22

申请号：US15074193

申请日：2016-03-18

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chin LIN ,  Ying-Chieh CHEN ,  Chi-Shiang HSU ,  De Shan KUO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/20 ,  H01L33/0095 ,  H01L33/025

Abstract: A light emitting device, includes: a substrate, including a top surface, a bottom surface, a first side surface connecting the top surface and the bottom surface, a first group of deteriorated region, and a second group of deteriorated region; and a semiconductor stack formed on the top surface of the substrate, wherein the first side surface includes a first group of convex region and a first group of concave region, wherein the first group of convex region includes the first group of deteriorated region, and the first group of concave region includes the second group of deteriorated region.

Abstract translation: 一种发光器件，包括：基板，包括顶表面，底表面，连接顶表面和底表面的第一侧表面，第一组恶化区域和第二组恶化区域; 以及形成在所述基板的上表面上的半导体堆叠，其中所述第一侧面包括第一组凸区域和第一组凹区域，其中所述第一组凸区域包括所述第一组劣化区域， 第一组凹区包括第二组恶化区。

公开(公告)号：US20230317765A1

公开(公告)日：2023-10-05

申请号：US18128327

申请日：2023-03-30

Applicant: EPISTAR CORPORATION

Inventor： Yong-Yang CHEN ,  Chao-Hsing CHEN ,  Chi-Shiang HSU

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light-emitting device comprises a plurality of light-emitting elements, comprising a first group light-emitting elements and a second group light-emitting elements; a trench separating the plurality of light-emitting units; a first electrode pad covering the first group light-emitting elements and located on the trench; a second electrode pad covering the second group light-emitting elements and located on the trench; and a cavity located on the trench, formed between the first electrode pad and the protective layer or formed between the second electrode pad and the protective layer.