公开(公告)号：US11251340B2

公开(公告)日：2022-02-15

申请号：US16749536

申请日：2020-01-22

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying Cho ,  De-Shan Kuo

IPC: H01L33/46 ,  H01L33/10 ,  H01L33/60 ,  H01L33/50

Abstract: A light-emitting device includes a substrate, having a first surface and second surface opposite to the first surface; a light-emitting stack, formed on the first surface of the substrate, the light-emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer, wherein the active layer is formed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a distributed Bragg reflection structure (DBR), formed on the second surface of the substrate, including a plurality of dielectric-layer pair formed sequentially on the second surface, wherein each of the dielectric-layer pairs includes respectively a first dielectric layer having a first optical thickness and a second dielectric layer having a second optical thickness, and wherein from the second surface, the first dielectric layer of each of the dielectric-layer pairs is thicker than the first dielectric layer of the adjacent previous dielectric-layer pair.

公开(公告)号：US12166151B2

公开(公告)日：2024-12-10

申请号：US17389467

申请日：2021-07-30

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying Cho ,  Li-Yu Shen ,  Yu-Yi Hung ,  Chen Ou ,  Li-Ming Chang

IPC: H01L33/10 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

公开(公告)号：US12243966B2

公开(公告)日：2025-03-04

申请号：US17354922

申请日：2021-06-22

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying Cho ,  Li-Yu Shen ,  Chih-Hao Chen ,  Keng-Lin Chuang

IPC: H01L33/44 ,  H01L27/15 ,  H01L33/02 ,  H01L33/10 ,  H01L33/58

Abstract: A light-emitting device comprises a semiconductor stack emitting a light with a peak wavelength λ; and a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness.

公开(公告)号：US11855240B2

公开(公告)日：2023-12-26

申请号：US17584004

申请日：2022-01-25

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying Cho ,  De-Shan Kuo

IPC: H01L33/10 ,  H01L33/46 ,  H01L33/60 ,  H01L33/50 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0756 ,  H01L33/10 ,  H01L33/50 ,  H01L33/60

Abstract: A light-emitting device includes a substrate having a first surface and a second surface opposite to the first surface; a light-emitting stack formed on the first surface; and a distributed Bragg reflection structure formed on the second surface, wherein the distributed Bragg reflection structure includes a first film stack and a second film stack; wherein the first film stack includes a plurality of first dielectric-layer pairs consecutively arranged, the second film stack includes a plurality of second dielectric-layer pairs consecutively arranged, each of the first dielectric-layer pairs and each of the second dielectric-layer pairs respectively includes a first dielectric layer having an optical thickness and a second dielectric layer having an optical thickness; wherein the second dielectric layer has a refractive index higher than that of the first dielectric layer; wherein in each of the first dielectric-layer pairs of the first film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer have a first ratio, and in each of the second dielectric-layer pairs of the second film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer have a second ratio; wherein the first ratio is greater than the second ratio; and wherein the first film stack is farther from the second surface of the substrate than the second film stack.