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公开(公告)号：US10784427B2
公开(公告)日：2020-09-22
申请号：US16579218
申请日：2019-09-23
Applicant: EPISTAR CORPORATION
Inventor： Li-Ming Chang , Tzung-Shiun Yeh , Chien-Fu Shen , Yu-Rui Lin , Chen Ou , Hsin-Ying Wang , Hui-Chun Yeh
IPC: H01L33/62 , H01L33/20 , H01L33/06 , H01L33/30 , F21Y115/10 , H01L33/22 , H01L23/60 , F21K9/232 , H01L33/32 , H01L33/00 , H01L33/38 , H01L33/14
Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.
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公开(公告)号：US12166151B2
公开(公告)日：2024-12-10
申请号：US17389467
申请日：2021-07-30
Applicant: EPISTAR CORPORATION
Inventor： Heng-Ying Cho , Li-Yu Shen , Yu-Yi Hung , Chen Ou , Li-Ming Chang
Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.
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公开(公告)号：US11705539B2
公开(公告)日：2023-07-18
申请号：US17136714
申请日：2020-12-29
Applicant: EPISTAR CORPORATION
Inventor： Tzung-Shiun Yeh , Li-Ming Chang , Chien-Fu Shen
Abstract: An optoelectronic device includes a semiconductor stack including a top surface; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes transparent insulated material; a first opening, formed in the first pad portion, exposing the top surface of the semiconductor stack; a transparent conductive layer, covering the top surface of the semiconductor stack, including a second opening overlapping the first opening; and a first electrode, formed on the semiconductor stack, including a first pad electrode formed on the first pad portion of the current blocking region; wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; wherein the first opening includes a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.
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公开(公告)号：US10910520B2
公开(公告)日：2021-02-02
申请号：US16893342
申请日：2020-06-04
Applicant: EPISTAR CORPORATION
Inventor： Tzung-Shiun Yeh , Li-Ming Chang , Chien-Fu Shen
Abstract: An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed on the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.
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公开(公告)号：US10475962B2
公开(公告)日：2019-11-12
申请号：US15889888
申请日：2018-02-06
Applicant: EPISTAR CORPORATION
Inventor： Tzung-Shiun Yeh , Li-Ming Chang , Chien-Fu Shen
Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, formed above the semiconductor stack and comprising a first pad portion and a first finger portion; a first opening, formed in the first pad portion, wherein in a top view, the first opening comprises an elongated shape defined by the first pad portion; a transparent conductive layer formed on the current blocking region and/or a surface of the semiconductor stack; and a first electrode formed above the current blocking region; wherein the transparent conductive layer comprises a second opening to expose the first opening, and the first electrode electrically connects the semiconductor stack through the first opening and the second opening.
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Patent Agency Ranking
公开(公告)号：US12237437B2
公开(公告)日：2025-02-25
申请号：US17674690
申请日：2022-02-17
Applicant: EPISTAR CORPORATION
Inventor： Li-Ming Chang , Tzung-Shiun Yeh , Chien-Fu Shen , Wen-Hsiang Lin , Pei-Chi Chiang , Yi-Wen Ku
Abstract: A light-emitting package, includes: a housing including an opening; a lead frame covered by the housing; a light-emitting device, mounted in the opening and electrically connected to the lead frame, the light-emitting device including: a substrate including: a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; a semiconductor stack on the main surface, the semiconductor stack including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area not covered by the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon; and a filling material filling in the opening and covering the light-emitting device.
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公开(公告)号：USD1012330S1
公开(公告)日：2024-01-23
申请号：US29758799
申请日：2020-11-18
Applicant: EPISTAR CORPORATION
Designer： Chen Ou , Li-Ming Chang , Chien-Fu Shen , Hsin-Ying Wang
Abstract: FIG. 1 is a perspective view of a light-emitting diode device showing a first embodiment of our new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof;
FIG. 8 is a perspective view of a light-emitting diode device showing a second embodiment of our new design;
FIG. 9 is a front elevational view thereof;
FIG. 10 is a rear elevational view thereof;
FIG. 11 is a left side view thereof;
FIG. 12 is a right side view thereof;
FIG. 13 is a top plan view thereof;
FIG. 14 is a bottom plan view thereof;
FIG. 15 is a perspective view of a light-emitting diode device showing a third embodiment of our new design;
FIG. 16 is a front elevational view thereof;
FIG. 17 is a rear elevational view thereof;
FIG. 18 is a left side view thereof;
FIG. 19 is a right side view thereof;
FIG. 20 is a top plan view thereof;
FIG. 21 is a bottom plan view thereof;
FIG. 22 is a perspective view of a light-emitting diode device showing a fourth embodiment of our new design;
FIG. 23 is a front elevational view thereof;
FIG. 24 is a rear elevational view thereof;
FIG. 25 is a left side view thereof;
FIG. 26 is a right side view thereof;
FIG. 27 is a top plan view thereof; and,
FIG. 28 is a bottom plan view thereof.
The broken lines illustrate portions of the light-emitting diode device and form no part of the claimed design.-
公开(公告)号：US11430934B2
公开(公告)日：2022-08-30
申请号：US16985945
申请日：2020-08-05
Applicant: EPISTAR CORPORATION
Inventor： Li-Ming Chang , Tzung-Shiun Yeh , Chien-Fu Shen , Yu-Rui Lin , Chen Ou , Hsin-Ying Wang , Hui-Chun Yeh
IPC: H01L33/62 , H01L33/20 , H01L33/06 , H01L33/30 , F21Y115/10 , H01L33/22 , H01L23/60 , F21K9/232 , H01L33/32 , H01L33/00 , H01L33/38 , H01L33/14
Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.
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公开(公告)号：US11282982B2
公开(公告)日：2022-03-22
申请号：US16749884
申请日：2020-01-22
Applicant: EPISTAR CORPORATION
Inventor： Li-Ming Chang , Tzung-Shiun Yeh , Chien-Fu Shen , Wen-Hsiang Lin , Pei-Chi Chiang , Yi-Wen Ku
Abstract: A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.
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公开(公告)号：US10707376B2
公开(公告)日：2020-07-07
申请号：US16592428
申请日：2019-10-03
Applicant: EPISTAR CORPORATION
Inventor： Tzung-Shiun Yeh , Li-Ming Chang , Chien-Fu Shen
Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes transparent insulated material; a transparent conductive layer, formed on the current blocking region and/or a surface of the semiconductor stack; a first opening, formed in the first pad portion, wherein in a top view, the first opening includes elongated shape; and a first electrode, including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening.
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