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    Light-emitting element
    1.
    发明授权
    Light-emitting element 有权
    发光元件

    公开(公告)号：US09461208B2

    公开(公告)日：2016-10-04

    申请号：US15050917

    申请日：2016-02-23

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/46

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.

    Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 第一电极，其包括多个接触区域和多个延伸区域，其中所述多个接触区域彼此物理分离; 以及形成在所述发光半导体堆叠上并分别电连接到所述第一半导体层和所述第二半导体层的第一导电部分和第二导电部分，其中所述第一导电部分和所述第二导电部分各自包括凹凸轮廓 。

    Light-emitting element having conductive contact layer
    2.
    发明授权
    Light-emitting element having conductive contact layer 有权

    公开(公告)号：US11699776B2

    公开(公告)日：2023-07-11

    申请号：US17185551

    申请日：2021-02-25

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/24

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

    Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.

    Optoelectronic device and method for manufacturing the same
    3.
    发明授权
    Optoelectronic device and method for manufacturing the same 有权
    光电子器件及其制造方法

    公开(公告)号：US09466767B2

    公开(公告)日：2016-10-11

    申请号：US14537058

    申请日：2014-11-10

    Applicant: EPISTAR CORPORATION

    Inventor： Jia-Kuen Wang ,  Chien-Fu Shen ,  Hung-Che Chen ,  Chao-Hsing Chen

    IPC: H01L33/40 ,  H01L33/00 ,  H01L33/60

    CPC classification number: H01L33/38 ,  H01L33/0095 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

    Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.

    Abstract translation: 光电子器件包括半导体叠层，形成在半导体叠层之上的第一金属层，其中第一金属层包括第一主平面和逐渐减小厚度的第一边界，以及形成在第一金属层之上的第二金属层， 其中所述第二金属层包括与所述第一主平面平行的第二主平面和具有逐渐减小的厚度的第二边界，并且所述第二金属层的第二边界超过所述第一金属层的第一边界。

    Light-emitting element
    4.
    发明授权
    Light-emitting element 有权
    发光元件

    公开(公告)号：US09306123B2

    公开(公告)日：2016-04-05

    申请号：US14827872

    申请日：2015-08-17

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/46 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part.

    Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 第一电极，其包括接触区域和与第一半导体层电连接的延伸部分，其中延伸部连接到接触区域; 在所述第二半导体层上的第二电极; 以及形成在所述发光半导体堆叠上并分别电连接到所述第一电极和所述第二电极的第一导电部分和第二导电部分，其中所述延伸部形成在所述第二导电部件的投影区域之外， 第一导电部分，并且接触区域被第一导电部件覆盖。

    Light-emitting element
    5.
    发明授权
    Light-emitting element 有权

    公开(公告)号：US10964847B2

    公开(公告)日：2021-03-30

    申请号：US16446059

    申请日：2019-06-19

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/24

    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a barrier layer formed on the reflective stack; a protection layer formed on the barrier layer, comprising a first through hole and a second through hole; a first height balancer filled in the first through hole and formed on the protection layer; a second height balancer filled in the second through hole and formed on the protection layer; and a conductive contact layer comprising a first conductive part formed on the first height balancer and a second conductive part formed on the second height balancer.

    LIGHT-EMITTING ELEMENT
    7.
    发明申请
    LIGHT-EMITTING ELEMENT 审中-公开
    发光元件

    公开(公告)号：US20160172543A1

    公开(公告)日：2016-06-16

    申请号：US15050917

    申请日：2016-02-23

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

    IPC: H01L33/38 ,  H01L33/46

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the first conductive part and the second conductive part each comprises a concave-convex profile.

    Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 第一电极，其包括多个接触区域和多个延伸区域，其中所述多个接触区域彼此物理分离; 以及形成在所述发光半导体堆叠上并分别电连接到所述第一半导体层和所述第二半导体层的第一导电部分和第二导电部分，其中所述第一导电部分和所述第二导电部分各自包括凹凸轮廓 。

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