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    Light-emitting element having conductive contact layer
    1.
    发明授权
    Light-emitting element having conductive contact layer 有权

    公开(公告)号：US11699776B2

    公开(公告)日：2023-07-11

    申请号：US17185551

    申请日：2021-02-25

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/24

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

    Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.

    Light-emitting device and manufacturing method thereof
    2.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US11437427B2

    公开(公告)日：2022-09-06

    申请号：US16750227

    申请日：2020-01-23

    Applicant: EPISTAR CORPORATION

    Inventor： Po-Shun Chiu ,  Tsung-Hsun Chiang ,  Liang-Sheng Chi ,  Jing Jiang ,  Jie Chen ,  Tzung-Shiun Yeh ,  Hsin-Ying Wang ,  Hui-Chun Yeh ,  Chien-Fu Shen

    IPC: H01L27/15 ,  H01L33/36 ,  F21K9/00 ,  H01L33/62

    Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

    Light-emitting diode device
    3.
    发明授权
    Light-emitting diode device 有权

    公开(公告)号：US10784427B2

    公开(公告)日：2020-09-22

    申请号：US16579218

    申请日：2019-09-23

    Applicant: EPISTAR CORPORATION

    Inventor： Li-Ming Chang ,  Tzung-Shiun Yeh ,  Chien-Fu Shen ,  Yu-Rui Lin ,  Chen Ou ,  Hsin-Ying Wang ,  Hui-Chun Yeh

    IPC: H01L33/62 ,  H01L33/20 ,  H01L33/06 ,  H01L33/30 ,  F21Y115/10 ,  H01L33/22 ,  H01L23/60 ,  F21K9/232 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/14

    Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

    Optoelectronic device and method for manufacturing the same
    10.
    发明授权
    Optoelectronic device and method for manufacturing the same 有权
    光电子器件及其制造方法

    公开(公告)号：US09466767B2

    公开(公告)日：2016-10-11

    申请号：US14537058

    申请日：2014-11-10

    Applicant: EPISTAR CORPORATION

    Inventor： Jia-Kuen Wang ,  Chien-Fu Shen ,  Hung-Che Chen ,  Chao-Hsing Chen

    IPC: H01L33/40 ,  H01L33/00 ,  H01L33/60

    CPC classification number: H01L33/38 ,  H01L33/0095 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

    Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.

    Abstract translation: 光电子器件包括半导体叠层，形成在半导体叠层之上的第一金属层，其中第一金属层包括第一主平面和逐渐减小厚度的第一边界，以及形成在第一金属层之上的第二金属层， 其中所述第二金属层包括与所述第一主平面平行的第二主平面和具有逐渐减小的厚度的第二边界，并且所述第二金属层的第二边界超过所述第一金属层的第一边界。

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