公开(公告)号：US20240413268A1

公开(公告)日：2024-12-12

申请号：US18737448

申请日：2024-06-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Yang CHIU ,  Chun-Yu LIN ,  Chun Wei CHANG ,  Yi-Ming CHEN ,  Chen OU ,  Hung-Yu CHOU ,  Liang-Yi WU ,  Hsiao-Chi YANG

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44

Abstract: A semiconductor device includes a semiconductor stack, a reflective structure, and a conductive structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active region located between the first semiconductor structure and the second semiconductor structure. The reflective structure is located at a side of semiconductor stack closed to the first semiconductor structure, and includes a first metal. The conductive structure locates between the reflective structure and the first semiconductor structure, and includes a first region overlapping with the active structure and a second region which does not overlap with the active structure. The first metal in the second region has a concentration smaller than 5 atomic percent.