公开(公告)号：US20240186447A1

公开(公告)日：2024-06-06

申请号：US18439378

申请日：2024-02-12

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

IPC: H01L33/02 ,  H01L21/66 ,  H01L23/00 ,  H01L25/075 ,  H01L33/36 ,  H01L33/62

CPC classification number: H01L33/02 ,  H01L22/12 ,  H01L22/14 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/62 ,  H01L33/36 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

公开(公告)号：US20190019920A1

公开(公告)日：2019-01-17

申请号：US16136102

申请日：2018-09-19

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru CHANG ,  Wen-Luh LIAO ,  Chun-Yu LIN ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG

IPC: H01L33/44 ,  H01L33/62 ,  H01L33/38 ,  H01L33/30 ,  H01L33/24 ,  H01L33/22 ,  H01L33/20 ,  H01L33/08

CPC classification number: H01L33/44 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/305 ,  H01L33/38 ,  H01L33/62

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

公开(公告)号：US20180012929A1

公开(公告)日：2018-01-11

申请号：US15711737

申请日：2017-09-21

Applicant: Epistar Corporation

Inventor： Shao-Ping LU ,  Yi-Ming CHEN ,  Yu-Ren PENG ,  Chun-Yu LIN ,  Chun-Fu TSAI ,  Tzu-Chieh HSU

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.

公开(公告)号：US20240413268A1

公开(公告)日：2024-12-12

申请号：US18737448

申请日：2024-06-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Yang CHIU ,  Chun-Yu LIN ,  Chun Wei CHANG ,  Yi-Ming CHEN ,  Chen OU ,  Hung-Yu CHOU ,  Liang-Yi WU ,  Hsiao-Chi YANG

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44

Abstract: A semiconductor device includes a semiconductor stack, a reflective structure, and a conductive structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active region located between the first semiconductor structure and the second semiconductor structure. The reflective structure is located at a side of semiconductor stack closed to the first semiconductor structure, and includes a first metal. The conductive structure locates between the reflective structure and the first semiconductor structure, and includes a first region overlapping with the active structure and a second region which does not overlap with the active structure. The first metal in the second region has a concentration smaller than 5 atomic percent.

公开(公告)号：US20210367098A1

公开(公告)日：2021-11-25

申请号：US17397388

申请日：2021-08-09

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

IPC: H01L33/02 ,  H01L21/66 ,  H01L33/62 ,  H01L25/075 ,  H01L23/00

Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

公开(公告)号：US20180033918A1

公开(公告)日：2018-02-01

申请号：US15709810

申请日：2017-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yung-Fu CHANG ,  Rong-Ren LEE ,  Kuo-Feng HUANG ,  Cheng-Long YEH ,  Yi-Ching LEE ,  Ming-Siang HUANG ,  Ming-Tzung LIOU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US20170256681A1

公开(公告)日：2017-09-07

申请号：US15600179

申请日：2017-05-19

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh LIAO ,  Chun-Yu LIN ,  Kun-De LIN

IPC: H01L33/42 ,  H01L33/60 ,  H01L33/62 ,  H01L33/20

CPC classification number: H01L33/42 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46

Abstract: A light-emitting element, comprises a light-emitting stack comprising an active layer; a window layer on the light-emitting stack, wherein the window layer has a surface opposite to the light-emitting stack; and an insulative layer on the surface, wherein the surface comprises a cavity and the insulative layer substantially conformally covering the cavity, and wherein the insulative layer has a first refractive index equal to or smaller than 1.4.

公开(公告)号：US20170194532A1

公开(公告)日：2017-07-06

申请号：US15467679

申请日：2017-03-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yi-Ming Chen ,  Shih-Chang LEE ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/06 ,  H01L33/42 ,  H01L33/22 ,  H01L33/40

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

公开(公告)号：US20160190205A1

公开(公告)日：2016-06-30

申请号：US15059936

申请日：2016-03-03

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Cheng-Hong CHEN ,  Chih-Peng NI ,  Chun-Yu LIN

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/38 ,  H01L49/02 ,  H01L33/10

CPC classification number: H01L27/15 ,  H01L28/20 ,  H01L33/025 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Abstract translation: 提供了一种发光装置。 发光装置包括：半导体结构，包括第一类型半导体层，第二类型半导体层和在第一类型半导体层和第二类型半导体层之间的有源层; 以及通过所述第二类型半导体和所述有源层的隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 其中第二部分用作低电阻电阻并失去其二极管行为，第一部分中的有源层能够产生光，并且第二部分中的有源层不能产生光。

公开(公告)号：US20140193932A1

公开(公告)日：2014-07-10

申请号：US14204764

申请日：2014-03-11

Applicant: Epistar Corporation

Inventor： Rong-Ren LEE ,  Cheng-Hong CHEN ,  Chih-Peng NI ,  Chun-Yu LIN

IPC: H01L33/60

CPC classification number: H01L27/15 ,  H01L28/20 ,  H01L33/025 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

Abstract translation: 一种制造发光器件的方法包括以下步骤：提供第一衬底; 在所述第一衬底上形成半导体结构，其中所述半导体结构包括第一类型半导体层，第二类型半导体层和在所述第一类型半导体层和所述第二类型半导体层之间的有源层; 通过所述第二类型半导体和所述有源层形成隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 以及向所述第二部分注入具有电流密度的电流，以使所述第二部分永久分解; 其中在所述第二部分被永久分解之后，所述第一部分能够产生电磁辐射，并且所述第二部分不能产生电磁辐射。