公开(公告)号：US20240290902A1

公开(公告)日：2024-08-29

申请号：US18584699

申请日：2024-02-22

Applicant: EPISTAR CORPORATION

Inventor： Chang Da Tsai ,  I-Hung Chen ,  Yu Cheng Su

IPC: H01L31/109 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/0304 ,  H01L31/173

CPC classification number: H01L31/109 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/02165 ,  H01L31/03046 ,  H01L31/173

Abstract: A light-detecting device includes a base, a first absorption layer, a second absorption layer and a first semiconductor layer. The first absorption layer is located on the base and has a first band gap. The second absorption layer is located between the first absorption layer and the base and has a second band gap and a first dopant. The first semiconductor layer is located between the first absorption layer and the second absorption layer and has a third band gap. The second band gap is equal to or greater than the first band gap, and a third band gap greater than the first band gap and the second band gap. The first absorption layer does not include the first dopant.

公开(公告)号：US11935969B2

公开(公告)日：2024-03-19

申请号：US17092674

申请日：2020-11-09

Applicant: EPISTAR CORPORATION

Inventor： Shih-Chang Lee ,  Shiuan-Leh Lin ,  I-Hung Chen ,  Chu-Jih Su ,  Chao-Shun Huang

IPC: H01L31/0216 ,  H01L31/0203

CPC classification number: H01L31/02162 ,  H01L31/0203

Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.

公开(公告)号：US20210151612A1

公开(公告)日：2021-05-20

申请号：US17092674

申请日：2020-11-09

Applicant: EPISTAR CORPORATION

Inventor： Shih-Chang Lee ,  Shiuan-Leh Lin ,  I-Hung Chen ,  Chu-Jih Su ,  Chao-Shun Huang

IPC: H01L31/0216 ,  H01L31/0203

Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.