公开(公告)号：US20210408310A1

公开(公告)日：2021-12-30

申请号：US16917223

申请日：2020-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih Su ,  Chao-Shun Huang ,  Shiuan-Leh Lin ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei-Chun Liu

IPC: H01L31/055 ,  H01L31/0304 ,  H01L31/0224 ,  H01L25/16

Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.

公开(公告)号：US09525101B2

公开(公告)日：2016-12-20

申请号：US14257716

申请日：2014-04-21

Applicant: EPISTAR CORPORATION

Inventor： Shiuan-Leh Lin ,  Shih-Chang Lee

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/02 ,  H01L21/30 ,  H01L29/205 ,  H01L31/18 ,  H01L33/12 ,  H01L31/0304 ,  H01L31/0687

CPC classification number: H01L33/12 ,  H01L21/02461 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02543 ,  H01L31/03046 ,  H01L31/06875 ,  H01L31/1844 ,  Y02E10/544

Abstract: An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.

Abstract translation: 一种光电器件，包括具有第一晶格常数的第一半导体层; 具有第二晶格常数的第二半导体层，其中所述第二晶格常数小于所述第一晶格常数; 以及形成在第一半导体层和第二半导体层之间的第一缓冲层，其中在第二半导体层附近的第一缓冲层的一侧的晶格常数小于第二晶格常数。

公开(公告)号：US09269870B2

公开(公告)日：2016-02-23

申请号：US14038969

申请日：2013-09-27

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Shiuan-Leh Lin ,  Chih-Chiang Lu ,  Chia-Liang Hsu

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/02 ,  H01L33/10

CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 形成在所述基板上的中间层; 透明结合层; 通过透明结合层与半导体层接合的第一半导体窗口层; 以及形成在第一半导体窗口层上的发光叠层。 中间层具有基板的折射率与第一半导体窗口层的折射率之间的折射率。

公开(公告)号：US11894481B2

公开(公告)日：2024-02-06

申请号：US17510522

申请日：2021-10-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh Lin ,  Shiuan-Leh Lin ,  Yung-Fu Chang ,  Shih-Chang Lee ,  Chia-Liang Hsu ,  Yi Hsiao ,  Wen-Luh Liao ,  Hong-Chi Shih ,  Mei-Chun Liu

IPC: H01L31/02 ,  H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

CPC classification number: H01L31/167 ,  A61B5/02141 ,  A61B5/02427 ,  A61B5/02433 ,  A61B5/14546 ,  A61B5/14552 ,  G01J3/10 ,  H01L25/167 ,  H01L31/02005 ,  H01L31/02325 ,  H01L31/03046

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.

公开(公告)号：US09954140B2

公开(公告)日：2018-04-24

申请号：US15596644

申请日：2017-05-16

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Shiuan-Leh Lin ,  Chih-Chiang Lu ,  Chia-Liang Hsu

IPC: H01L33/12 ,  H01L33/46 ,  H01L33/30 ,  H01L33/32 ,  H01L33/22

CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 Å.

公开(公告)号：US11935969B2

公开(公告)日：2024-03-19

申请号：US17092674

申请日：2020-11-09

Applicant: EPISTAR CORPORATION

Inventor： Shih-Chang Lee ,  Shiuan-Leh Lin ,  I-Hung Chen ,  Chu-Jih Su ,  Chao-Shun Huang

IPC: H01L31/0216 ,  H01L31/0203

CPC classification number: H01L31/02162 ,  H01L31/0203

Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.

公开(公告)号：US20210151612A1

公开(公告)日：2021-05-20

申请号：US17092674

申请日：2020-11-09

Applicant: EPISTAR CORPORATION

Inventor： Shih-Chang Lee ,  Shiuan-Leh Lin ,  I-Hung Chen ,  Chu-Jih Su ,  Chao-Shun Huang

IPC: H01L31/0216 ,  H01L31/0203

Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.

公开(公告)号：US09035280B2

公开(公告)日：2015-05-19

申请号：US13970949

申请日：2013-08-20

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren Lee ,  Chien-Fu Huang ,  Shih-Chang Lee ,  Yi-Ming Chen ,  Shiuan-Leh Lin

IPC: H01L33/06 ,  H01L33/04

CPC classification number: H01L33/04 ,  H01L33/06

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract translation: 本文公开的发光器件包括衬底，形成在衬底上并包括第一量子阱，第二量子阱和设置在第一量子阱和第二量子阱之间的势垒层的有源层。 阻挡层包括与第一量子阱相邻的第一区域，与第二量子阱相邻的第三区域和设置在第一区域和第三区域之间并包含Sb的第二区域。

公开(公告)号：US11335826B2

公开(公告)日：2022-05-17

申请号：US16917223

申请日：2020-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih Su ,  Chao-Shun Huang ,  Shiuan-Leh Lin ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei-Chun Liu

IPC: H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/12 ,  H01L31/101

Abstract: A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.

公开(公告)号：US11158757B2

公开(公告)日：2021-10-26

申请号：US16697340

申请日：2019-11-27

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh Lin ,  Shiuan-Leh Lin ,  Yung-Fu Chang ,  Shih-Chang Lee ,  Chia-Liang Hsu ,  Yi Hsiao ,  Wen-Luh Liao ,  Hong-Chi Shih ,  Mei-Chun Liu

IPC: H01L31/0304 ,  H01L31/167 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ≥13.