公开(公告)号：US20190051791A1

公开(公告)日：2019-02-14

申请号：US16159251

申请日：2018-10-12

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun CHIU ,  De-Shan KUO ,  Jhih-Jheng YANG ,  Jiun-Ru HUANG ,  Jian-Huei LI ,  Ying-Chieh CHEN ,  Zi-Jin LIN

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/10

CPC classification number: H01L33/0095 ,  H01L33/10 ,  H01L33/22

Abstract: A method of manufacturing a light-emitting device is disclosed. The method includes providing a light-emitting diode wafer, including a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser on the light-emitting diode wafer and irradiating the light-emitting diode wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing an etching process; providing and focusing a second laser on an interior of the substrate to form one or a plurality of textured areas in the substrate; and providing force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips along the plurality of scribing lines.

公开(公告)号：US20170294553A1

公开(公告)日：2017-10-12

申请号：US15626993

申请日：2017-06-19

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun CHIU ,  De-Shan KUO ,  Jhih-Jheng YANG ,  Jiun-Ru HUANG ,  Jian-Huei LI ,  Ying-Chieh CHEN ,  Zi-Jin LIN

IPC: H01L33/00 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/10 ,  H01L33/22

Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser to the LED wafer and irradiating the LED wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

公开(公告)号：US20160013361A1

公开(公告)日：2016-01-14

申请号：US14796166

申请日：2015-07-10

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun CHIU ,  De-Shan KUO ,  Jhih-Jheng YANG ,  Jiun-Ru HUANG ,  Jian-Huei LI ,  Ying-Chieh CHEN ,  Tzu-Chin LIN

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/10 ,  H01L33/22

Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface; providing a first laser to the LED wafer to cut through the semiconductor stack with a depth into the substrate; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

Abstract translation: 公开了一种发光器件的制造方法。 该方法包括提供包括衬底和形成在衬底上的半导体叠层的LED晶片，其中半导体叠层具有下表面; 向所述LED晶片提供第一激光以穿过所述半导体堆叠，并具有进入所述衬底的深度; 在所述衬底的内部提供和聚焦第二激光以在所述衬底中形成多个纹理化区域; 并且在LED晶片上施加力以将LED晶片分离成多个LED芯片。