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公开(公告)号：US10890553B2
公开(公告)日：2021-01-12
申请号：US15804455
申请日：2017-11-06
Applicant: EPISTAR CORPORATION
Inventor： Kunal Kashyap , Kun-Wei Kao , Yih-Hua Renn , Meng-Lun Tsai , Zong-Xi Chen , Hsin-Mao Liu , Jui-Hung Yeh , Hung-Chi Wang
IPC: G01N27/414 , H01L29/778 , H01L23/34 , G01N27/02 , H01L29/20 , H01L29/205 , H01L29/10 , H01L23/31
Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.
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公开(公告)号：US12095012B2
公开(公告)日：2024-09-17
申请号：US17377784
申请日：2021-07-16
Applicant: EPISTAR CORPORATION , Yenrich Technology Corporation
Inventor： Min-Hsun Hsieh , Kunal Kashyap
CPC classification number: H01L33/54 , H01L33/0093 , H01L33/50 , H01L33/007 , H01L2933/0041 , H01L2933/005
Abstract: A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.
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