公开(公告)号：US20230027930A1

公开(公告)日：2023-01-26

申请号：US17869582

申请日：2022-07-20

Applicant: EPISTAR CORPORATION

Inventor： Po-Chou Pan ,  Shih-Chang Lee ,  Wei-Jen Hsueh ,  Sheng-Feng Kuo

IPC: H01L33/38

Abstract: A semiconductor device is provided, which includes a substrate, a first semiconductor structure, a plurality of first holes, a first dielectric structure and a second semiconductor structure. The first semiconductor structure is located on the substrate. The first holes are periodically arranged in the first semiconductor structure. The first dielectric structure is filled in one or more of the first holes. The second semiconductor structure is located on the first semiconductor structure.

公开(公告)号：US20230074033A1

公开(公告)日：2023-03-09

申请号：US17940361

申请日：2022-09-08

Applicant: EPISTAR CORPORATION

Inventor： Wei-Jen Hsueh ,  Shih-Chang Lee ,  Chen Ou ,  Po-Chou Pan ,  Wen-Luh Liao

IPC: H01L27/15 ,  H01L27/144

Abstract: An optoelectronic device includes a substrate, a first semiconductor stack located on the substrate, a second semiconductor stack located on the first semiconductor stack, and a first optical structure located between the first semiconductor stack and the second semiconductor stack. The first semiconductor stack includes a first semiconductor layer, a second semiconductor layer and a first active layer which emits or absorbs a first light with a first wavelength. The second semiconductor stack includes a third semiconductor layer, a fourth semiconductor layer and a second active layer which emits or absorbs a second light with a second wavelength smaller than the first wavelength. The first optical structure includes a plurality of first parts and a plurality of second parts. The first parts and the second parts are alternately arranged by a first period along a horizontal direction parallel to the substrate.