公开(公告)号：US09087967B2

公开(公告)日：2015-07-21

申请号：US13856220

申请日：2013-04-03

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Tsung-Xian Lee ,  Yi-Ming Chen ,  Wei-Yu Chen ,  Ching-Pei Lin ,  Min-Hsun Hsieh ,  Cheng-Nan Han ,  Tien-Yang Wang ,  Hsing-Chao Chen ,  Hsin-Mao Liu ,  Zong-Xi Chen ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Yu-Ren Peng

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L25/075

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。