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    Light-emitting device
    4.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09087967B2

    公开(公告)日：2015-07-21

    申请号：US13856220

    申请日：2013-04-03

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I Chen ,  Tsung-Xian Lee ,  Yi-Ming Chen ,  Wei-Yu Chen ,  Ching-Pei Lin ,  Min-Hsun Hsieh ,  Cheng-Nan Han ,  Tien-Yang Wang ,  Hsing-Chao Chen ,  Hsin-Mao Liu ,  Zong-Xi Chen ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Yu-Ren Peng

    IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L25/075

    CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

    Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

    Light-emitting device
    5.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08916884B2

    公开(公告)日：2014-12-23

    申请号：US13851997

    申请日：2013-03-28

    Applicant: Epistar Corporation

    Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

    IPC: H01L27/15 ,  H01L21/00 ,  H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer; a first electrode substantially joined with only the first extending portion or a part of the first extending part; and a second electrode substantially joined with only the second extending portion or a part of the second extending portion.

    Abstract translation: 公开了一种发光器件，包括：具有长度和宽度的发光叠层，包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 和有源层上的第二导电类型半导体层; 导电层，其宽度大于第一导电类型半导体层的宽度，并且在第一导电类型半导体层下方，导电层包括与第一导电类型半导体层重叠的第一重叠部分和不与第一导电类型半导体层重叠的第一延伸部分 重叠第一导电类型半导体层; 透明导电层，其宽度大于第二导电类型半导体层上的第二导电类型半导体层的宽度，透明导电层包括与第二导电类型半导体层重叠的第二重叠部分和与第二导电类型半导体层重叠的第二延伸部分 不与第二导电类型半导体层重叠; 第一电极，仅基本上与第一延伸部分或第一延伸部分的一部分连接; 以及仅与第二延伸部分或第二延伸部分的一部分基本上接合的第二电极。

    Light-emitting device
    6.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11600749B2

    公开(公告)日：2023-03-07

    申请号：US16003866

    申请日：2018-06-08

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

    IPC: H01L33/42 ,  H01L33/38

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

    Light-emitting device
    7.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10014441B2

    公开(公告)日：2018-07-03

    申请号：US14579807

    申请日：2014-12-22

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

    IPC: H01L33/00 ,  H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/00 ,  H01L2924/0002

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

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