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公开(公告)号：US20240154065A1
公开(公告)日：2024-05-09
申请号：US18410823
申请日：2024-01-11
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Chien-Chih LIAO , Tzu-Yao TSENG , Tsun-Kai KO , Chien-Fu SHEN
IPC: H01L33/38
CPC classification number: H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405
Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.
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公开(公告)号：US20230238488A1
公开(公告)日：2023-07-27
申请号：US18118488
申请日：2023-03-07
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
CPC classification number: H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
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公开(公告)号：US20210210659A1
公开(公告)日：2021-07-08
申请号：US17206647
申请日：2021-03-19
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.
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公开(公告)号：US20240234635A9
公开(公告)日：2024-07-11
申请号：US18401106
申请日：2023-12-29
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
CPC classification number: H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
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公开(公告)号：US20230261148A1
公开(公告)日：2023-08-17
申请号：US18136921
申请日：2023-04-20
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
CPC classification number: H01L33/46 , H01L33/382 , H01L33/38 , H01L33/405
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.
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Patent Agency Ranking
公开(公告)号：US20180212110A1
公开(公告)日：2018-07-26
申请号：US15874398
申请日：2018-01-18
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Wen-Hung CHUANG , Tzu-Yao TSENG , Cheng-Lin LU
CPC classification number: H01L33/405 , F21K9/23 , F21K9/232 , F21K9/69 , F21Y2115/10 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: A light-emitting device includes a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; and a reflective layer located on the semiconductor structure and comprising an outer edge and a second area; wherein a distance between the first edge and the outer edge is between 0 μm and 10 μm, and the second area of the reflective layer is not less than 80% of the first area of the second semiconductor layer.
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公开(公告)号：US20170005232A1
公开(公告)日：2017-01-05
申请号：US15265069
申请日：2016-09-14
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
CPC classification number: H01L33/382 , H01L33/0012 , H01L33/08 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.
Abstract translation: 半导体发光器件包括：包括第一半导体层，第二半导体层和有源层的半导体堆叠; 穿过所述第二半导体层和所述有源层的多个第一沟槽以暴露所述第一半导体层; 穿过所述第二半导体层和所述有源层以暴露所述第一半导体层的第二沟槽，其中所述第二沟槽设置在所述有源层的最外边缘附近，并且包围所述有源层和所述多个第一沟槽; 形成在所述第二半导体层上并形成在所述多个第一沟槽或所述第二沟槽之一中的图案化金属层; 以及分别形成在所述第二半导体层上并分别电连接所述第二半导体层和所述第一半导体层的第一焊盘部分和第二焊盘部分。
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公开(公告)号：US20210391504A1
公开(公告)日：2021-12-16
申请号：US17357164
申请日：2021-06-24
Applicant: EPISTAR CORPORATION
Inventor： Yi-Hung LIN , Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG
Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.
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公开(公告)号：US20190273186A1
公开(公告)日：2019-09-05
申请号：US16416488
申请日：2019-05-20
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Wen-Hung CHUANG , Tzu-Yao TSENG , Cheng-Lin LU
Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.
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公开(公告)号：US20190245116A1
公开(公告)日：2019-08-08
申请号：US16384890
申请日：2019-04-15
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
CPC classification number: H01L33/46 , H01L33/38 , H01L33/382 , H01L33/405
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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