公开(公告)号：US20240113262A1

公开(公告)日：2024-04-04

申请号：US18241471

申请日：2023-09-01

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Hui-Chun YEH ,  Jhih-Yong YANG ,  Chen OU ,  Cheng-Lin LU

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/14 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/145 ,  H01L33/62

Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a first contact electrode and a second contact electrode formed on the semiconductor stack, wherein the first contact electrode includes a first contact part formed on the first semiconductor layer and the second contact electrode includes a second contact part formed on the second semiconductor layer; an insulating stack formed on the semiconductor stack, including an opening on the second contact part; a first electrode pad and a second electrode pad formed on the insulating stack, wherein the second electrode pad filled in the opening and connecting the second contact part; wherein the second electrode pad includes an upper surface, and the upper surface includes a platform area and a depression area on the second contact part; wherein the platform area has a maximum height relative to other areas of the upper surface; wherein an area of a projection of the platform area on a horizontal plane is A1, and a sum of areas of the projections of the platform area and the depression area on the horizontal plane is A2, and a ratio of A1/A2 ranges from 50%-80%.

公开(公告)号：US20180212125A1

公开(公告)日：2018-07-26

申请号：US15880067

申请日：2018-01-25

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao Tseng ,  Wen-Hung Chuang ,  Cheng-Lin LU

IPC: H01L33/62 ,  H01L33/46

CPC classification number: H01L33/405 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y2115/10 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.

公开(公告)号：US20200044116A1

公开(公告)日：2020-02-06

申请号：US16529370

申请日：2019-08-01

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46 ,  H01L33/00

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20180212110A1

公开(公告)日：2018-07-26

申请号：US15874398

申请日：2018-01-18

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Wen-Hung CHUANG ,  Tzu-Yao TSENG ,  Cheng-Lin LU

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42

CPC classification number: H01L33/405 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y2115/10 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting device includes a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; and a reflective layer located on the semiconductor structure and comprising an outer edge and a second area; wherein a distance between the first edge and the outer edge is between 0 μm and 10 μm, and the second area of the reflective layer is not less than 80% of the first area of the second semiconductor layer.

公开(公告)号：US20230197904A1

公开(公告)日：2023-06-22

申请号：US18113344

申请日：2023-02-23

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

CPC classification number: H01L33/385 ,  H01L33/10 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/0753 ,  H01L33/36

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20190273186A1

公开(公告)日：2019-09-05

申请号：US16416488

申请日：2019-05-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Wen-Hung CHUANG ,  Tzu-Yao TSENG ,  Cheng-Lin LU

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/62 ,  H01L33/42 ,  H01L33/46

Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

公开(公告)号：US20250126936A1

公开(公告)日：2025-04-17

申请号：US18984418

申请日：2024-12-17

Applicant: EPISTAR CORPORATION

Inventor： Jhih-Yong YANG ,  Hsin-Ying WANG ,  De-Shan KUO ,  Chao-Hsing CHEN ,  Yi-Hung LIN ,  Meng-Hsiang HONG ,  Kuo-Ching HUNG ,  Cheng-Lin LU

IPC: H10H20/841 ,  H10H20/814 ,  H10H20/831 ,  H10H20/857 ,  H10H29/14

Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the second reflective structure are disposed between the lower protective layer and the upper protective layer.

公开(公告)号：US20240014352A1

公开(公告)日：2024-01-11

申请号：US18370649

申请日：2023-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

CPC classification number: H01L33/385 ,  H01L33/10 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/0753 ,  H01L33/36

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20230335681A1

公开(公告)日：2023-10-19

申请号：US18212449

申请日：2023-06-21

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Wen-Hung CHUANG ,  Tzu-Yao TSENG ,  Cheng-Lin LU

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/0075

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

公开(公告)号：US20190148600A1

公开(公告)日：2019-05-16

申请号：US16246791

申请日：2019-01-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Wen-Hung CHUANG ,  Cheng-Lin LU

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/62 ,  H01L33/42

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.