-
公开(公告)号:US20170117321A1
公开(公告)日:2017-04-27
申请号:US15401850
申请日:2017-01-09
Applicant: EPISTAR CORPORATION
Inventor: Li-Ping JOU , Yu-Chen YANG , Jui-Hung YEH
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.
-
公开(公告)号:US20180033824A1
公开(公告)日:2018-02-01
申请号:US15727276
申请日:2017-10-06
Applicant: EPISTAR CORPORATION
Inventor: Li-Ping JOU , Yu-Chen YANG , Jui-Hung YEH
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.
-
公开(公告)号:US20180128761A1
公开(公告)日:2018-05-10
申请号:US15804455
申请日:2017-11-06
Applicant: EPISTAR CORPORATION
Inventor: Kunal KASHYAP , Kun-Wei KAO , Yih-Hua RENN , Meng-Lun TSAI , Zong-Xi CHEN , Hsin-Mao LIU , Jui-Hung YEH , Hung-Chi WANG
IPC: G01N27/02 , H01L29/778 , H01L29/20 , H01L29/205 , H01L23/34
CPC classification number: G01N27/414 , G01N27/02 , G01N27/4141 , H01L23/3171 , H01L23/345 , H01L29/1029 , H01L29/2003 , H01L29/205 , H01L29/7786 , H01L29/7787
Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.
-
公开(公告)号:US20160104744A1
公开(公告)日:2016-04-14
申请号:US14954708
申请日:2015-11-30
Applicant: Epistar Corporation
Inventor: Li-Ping JOU , Yu-Chen YANG , Jui-Hung YEH
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.
Abstract translation: 具有N个发光二极管单元(N≥3)的LED阵列包括永久基板,永久基板上的接合层,接合层上的第二导电层,第二导电层上的第二隔离层,交叉金属 所述第二隔离层上的第一隔离层,所述交叉金属层上的第一隔离层,所述第一隔离层上的导电连接层,所述导电连接层上的外延结构,以及所述外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。
-
5.
公开(公告)号:US20150364650A1
公开(公告)日:2015-12-17
申请号:US14302561
申请日:2014-06-12
Applicant: Epistar Corporation
Inventor: Guan-Ru HE , Jui-Hung YEH
CPC classification number: H01L33/508 , H01L33/54 , H01L2933/005
Abstract: The description discloses a lighting-emitting device and the method of manufacturing the same. A disclosed method of manufacturing a light-emitting device comprising providing a temporary substrate, forming a bonding pad on the temporary substrate, providing a first substrate, forming a light-emitting chip on the first substrate, connecting the light-emitting chip and the bonding pad layer.
Abstract translation: 该说明书公开了一种发光装置及其制造方法。 一种公开的制造发光器件的方法,包括提供临时衬底,在临时衬底上形成接合焊盘,提供第一衬底,在第一衬底上形成发光芯片,连接发光芯片和接合 垫层。
-
公开(公告)号:US20140319574A1
公开(公告)日:2014-10-30
申请号:US14330914
申请日:2014-07-14
Applicant: Epistar Corporation
Inventor: Li-Ping JOU , Yu-Chen YANG , Jui-Hung YEH
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.
Abstract translation: 具有N个发光二极管单元(N≥3)的LED阵列包括永久基板,永久基板上的接合层,接合层上的第二导电层,第二导电层上的第二隔离层,交叉金属 所述第二隔离层上的第一隔离层,所述交叉金属层上的第一隔离层,所述第一隔离层上的导电连接层,所述导电连接层上的外延结构,以及所述外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。
-
公开(公告)号:US20140054631A1
公开(公告)日:2014-02-27
申请号:US14065330
申请日:2013-10-28
Applicant: Epistar Corporation
Inventor: Li-Ping JOU , Yu-Chen YANG , Jui-Hung YEH
IPC: H01L33/08
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.
Abstract translation: 具有N个发光二极管单元(N> = 3)的LED阵列包括永久基板,永久基板上的接合层,接合层上的第二导电层,第二导电层上的第二隔离层,交叉 第二隔离层上的金属层,交叉金属层上的第一隔离层,第一隔离层上的导电连接层,导电连接层上的外延结构,外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。
-
-
-
-
-
-