公开(公告)号：US20240421250A1

公开(公告)日：2024-12-19

申请号：US18737766

申请日：2024-06-07

Applicant: EPISTAR CORPORATION

Inventor： Yu-Hsiang YEH ,  Shih-Wei WANG

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32

Abstract: A semiconductor structure includes a first semiconductor structure having a first conductivity type, a second semiconductor structure having a second conductivity type, an active structure disposed between the first semiconductor structure and the second semiconductor structure, a stress release structure disposed between the first semiconductor structure and the active structure, and an indium-containing layer disposed between the stress release structure and the first semiconductor structure. An indium content of the indium-containing layer is greater than an indium content of the stress release structure.

公开(公告)号：US20230134581A1

公开(公告)日：2023-05-04

申请号：US17979563

申请日：2022-11-02

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming LIU ,  Chen OU ,  Jing-Jie DAI ,  Shih-Wei WANG ,  Chih-Ciao YANG ,  Feng-Wen HUANG ,  Dian-Ying HU ,  Yu-Hsiang YEH

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.