公开(公告)号：US20230134581A1

公开(公告)日：2023-05-04

申请号：US17979563

申请日：2022-11-02

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming LIU ,  Chen OU ,  Jing-Jie DAI ,  Shih-Wei WANG ,  Chih-Ciao YANG ,  Feng-Wen HUANG ,  Dian-Ying HU ,  Yu-Hsiang YEH

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.

公开(公告)号：US20180287015A1

公开(公告)日：2018-10-04

申请号：US15938855

申请日：2018-03-28

Applicant: EPISTAR CORPORATION

Inventor： Yu-Shou WANG ,  Dian-Ying HU

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/025 ,  H01L33/04

Abstract: The semiconductor device includes a first conductivity-type semiconductor structure comprising a first stack and a second stack, wherein the first stack comprises alternate first layers and second layers, the second stack comprises alternate third layers and fourth layers. The semiconductor device includes a second conductivity-type semiconductor structure on the first conductivity-type semiconductor and includes an active structure between the first conductivity-type semiconductor structure and the second conductivity-type semiconductor structure. The first stack is between the active structure and the second stack, and a first difference between a maximum of the first doping concentration of one of the first layers and a minimum of the second doping concentration of one of the second layers is less than a second difference between a maximum of the third doping concentration of one of the third layers and a minimum of the fourth doping concentration of one of the fourth layers.