公开(公告)号：US20220029055A1

公开(公告)日：2022-01-27

申请号：US17496132

申请日：2021-10-07

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou WANG ,  Chun-Hsiang TU ,  Jing-Feng HUANG

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/00

Abstract: A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle a between thereof

公开(公告)号：US20180287015A1

公开(公告)日：2018-10-04

申请号：US15938855

申请日：2018-03-28

Applicant: EPISTAR CORPORATION

Inventor： Yu-Shou WANG ,  Dian-Ying HU

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/025 ,  H01L33/04

Abstract: The semiconductor device includes a first conductivity-type semiconductor structure comprising a first stack and a second stack, wherein the first stack comprises alternate first layers and second layers, the second stack comprises alternate third layers and fourth layers. The semiconductor device includes a second conductivity-type semiconductor structure on the first conductivity-type semiconductor and includes an active structure between the first conductivity-type semiconductor structure and the second conductivity-type semiconductor structure. The first stack is between the active structure and the second stack, and a first difference between a maximum of the first doping concentration of one of the first layers and a minimum of the second doping concentration of one of the second layers is less than a second difference between a maximum of the third doping concentration of one of the third layers and a minimum of the fourth doping concentration of one of the fourth layers.

公开(公告)号：US20170040491A1

公开(公告)日：2017-02-09

申请号：US15299754

申请日：2016-10-21

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou WANG ,  Chun-Hsiang TU ,  Jing-Feng HUANG

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/00 ,  H01L33/32 ,  H01L33/02

CPC classification number: H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.

Abstract translation: 发光器件包括具有顶表面的衬底; 包括第一上表面和第一侧壁的第一半导体堆叠，其中所述第一半导体堆叠在所述顶表面上并暴露所述顶表面的暴露部分; 包括第二侧壁的第二半导体堆叠，其中所述第二半导体堆叠在所述第一上表面上并暴露所述第一上表面的暴露部分; 其中，顶表面的第一侧壁和暴露部分之间形成锐角α，并且第二侧壁和第一上表面的暴露部分之间形成钝角β。