公开(公告)号：US20170040491A1

公开(公告)日：2017-02-09

申请号：US15299754

申请日：2016-10-21

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou WANG ,  Chun-Hsiang TU ,  Jing-Feng HUANG

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/00 ,  H01L33/32 ,  H01L33/02

CPC classification number: H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.

Abstract translation: 发光器件包括具有顶表面的衬底; 包括第一上表面和第一侧壁的第一半导体堆叠，其中所述第一半导体堆叠在所述顶表面上并暴露所述顶表面的暴露部分; 包括第二侧壁的第二半导体堆叠，其中所述第二半导体堆叠在所述第一上表面上并暴露所述第一上表面的暴露部分; 其中，顶表面的第一侧壁和暴露部分之间形成锐角α，并且第二侧壁和第一上表面的暴露部分之间形成钝角β。

公开(公告)号：US20190157507A1

公开(公告)日：2019-05-23

申请号：US16259410

申请日：2019-01-28

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Chun-Hsiang TU

IPC: H01L33/22 ,  H01L33/12 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0091

Abstract: A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle α between thereof, 30°≤α≤80°

公开(公告)号：US20180374990A1

公开(公告)日：2018-12-27

申请号：US16051842

申请日：2018-08-01

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou Wang ,  Chun-Hsiang TU ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10 ,  H01L33/22 ,  H01L33/16

CPC classification number: H01L33/12 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0091

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle α between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

公开(公告)号：US20220029055A1

公开(公告)日：2022-01-27

申请号：US17496132

申请日：2021-10-07

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou WANG ,  Chun-Hsiang TU ,  Jing-Feng HUANG

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/00

Abstract: A light-emitting device includes: a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack comprises a dislocation stop layer; wherein the dislocation stop layer comprises AlGaN; and wherein the first side wall and the second portion of the top surface form an acute angle a between thereof

公开(公告)号：US20200303587A1

公开(公告)日：2020-09-24

申请号：US16897046

申请日：2020-06-09

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Yu-Shou Wang ,  Chun-Hsiang TU ,  Jing-Feng Huang

IPC: H01L33/12 ,  H01L33/20 ,  H01L33/00

Abstract: A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.

公开(公告)号：US20170179341A1

公开(公告)日：2017-06-22

申请号：US15412759

申请日：2017-01-23

Applicant: EPISTAR CORPORATION

Inventor： Yen-Tai CHAO ,  Sen-Jung HSU ,  Tao-Chi CHANG ,  Wei-Chih WEN ,  Ou CHEN ,  Chun-Hsiang TU

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0091

Abstract: A manufacturing method of a light-emitting device comprising a first light semiconductor stack and a second semiconductor stack on thereof comprises steps of: providing a substrate with a top surface; forming a semiconductor stack on the substrate; forming a trench in the semiconductor stack to define multiple second semiconductor stacks and expose a first upper surface; forming a scribing region in the first upper surface to define multiple first semiconductor stacks; etching the scribing region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the scribing region to form multiple light-emitting devices, wherein the first side wall and the top surface form an acute angle α between thereof, and 30°≦α≦80°, and a side surface of the substrate directly connects the top surface after the dividing step.