4.
    发明专利
    未知

    公开(公告)号:AT471971T

    公开(公告)日:2010-07-15

    申请号:AT05759645

    申请日:2005-05-03

    Applicant: ESSILOR INT

    Abstract: The invention relates to a method of producing a substrate which is coated with a mesoporous layer and to the use thereof in ophthalmic optics. The inventive method comprises the following steps comprising: preparing a precursor sol containing (i) a precursor agent that is selected from compounds having formula M(X)4 (I), in which X is a hydrolysable group and M represents silicon or a tetravalent metal and mixtures thereof, (ii) at least one organic solvent, (iii) at least one pore-forming agent and (iv) water; depositing a film of the precursor sol on a main surface of the substrate; optionally consolidating the mesoporous structure of the deposited film; eliminating the pore-forming agent; and recovering the substrate coated with the mesoporous layer. The method is characterized in that: (i) the pore-forming agent is eliminated at a temperature of less than or equal to 150° C.; and (ii) the method comprises a step involving the introduction of at least one reactive agent bearing at least one hydrophobic group, before the deposition step and/or after said step.

    7.
    发明专利
    未知

    公开(公告)号:DE69912642T2

    公开(公告)日:2004-10-07

    申请号:DE69912642

    申请日:1999-12-08

    Applicant: ESSILOR INT

    Abstract: The method consists in hydrolysing an initial volume Vse of a precursor material comprising at least one polyalkoxysilane with a quantity of water such that x ⁢ ⁢ H 2 ⁢ O x ⁢ ⁢ Si >= 10 , ⁢ and where x H 2 0 and x Si represent the number of moles of H 2 0 and Si present, respectively, the concentration of the hydrolysate up to a volume substantially equal to the initial volume Vsi, leaving the concentrated hydrolysate until segregation into an aqueous phase and an organo-silicon phase, and recovery of the organo-silicon phase. A product can be obtained which comprises an organo-silicon sol comprising silicon species T 1 , T 2 , and T 3 , wherein the molar fraction of species T 2 is equal or greater than 50%, comprising a condensation rate equal to or greater than 0.65, and further defined as lacking water, as determined by analyzing a sample of said organo-silicon sol by 1 H NMR and observing the absence of peak corresponding to water.

    PROCEDE DE PREPARATION A BASSE TEMPERATURE DE REVETEMENTS MESOSTRUCTURES ELECTROCONDUCTEURS

    公开(公告)号:FR2961219A1

    公开(公告)日:2011-12-16

    申请号:FR1054532

    申请日:2010-06-09

    Abstract: La présente invention concerne un procédé de fabrication de revêtements mésostructurés comportant des structures électroconductrices formées de nanoparticules métalliques, comprenant les étapes consistant : a) à déposer, sur un substrat, une première couche d'un matériau, mésostructuré par un agent structurant, à base de silice et d'un matériau photocatalytique ; b) à déposer, sur la première couche, une seconde couche d'un matériau mésostructuré à base de silice, ladite seconde couche étant exempte de matériau photocatalytique ; c) à consolider les première et deuxième couches, à une température comprise entre 50 °C et 250 °C ; d) à mettre en contact le revêtement consolidé avec une solution contenant des ions métalliques et à l'irradier avec un rayonnement permettant l'activation du matériau photocatalytique, ledit procédé étant caractérisé par le fait qu'il ne comprend aucun traitement thermique à une température supérieure à 250 °C.

    Method of producing a substrate which is coated with a mesoporous layer and use thereof in ophthalmic optics

    公开(公告)号:AU2005276313B2

    公开(公告)日:2011-01-06

    申请号:AU2005276313

    申请日:2005-05-03

    Applicant: ESSILOR INT

    Abstract: The invention relates to a method of producing a substrate which is coated with a mesoporous layer and to the use thereof in ophthalmic optics. The inventive method comprises the following steps comprising: preparing a precursor sol containing (i) a precursor agent that is selected from compounds having formula M(X)4 (I), in which X is a hydrolysable group and M represents silicon or a tetravalent metal and mixtures thereof, (ii) at least one organic solvent, (iii) at least one pore-forming agent and (iv) water; depositing a film of the precursor sol on a main surface of the substrate; optionally consolidating the mesoporous structure of the deposited film; eliminating the pore-forming agent; and recovering the substrate coated with the mesoporous layer. The method is characterized in that: (i) the pore-forming agent is eliminated at a temperature of less than or equal to 150° C.; and (ii) the method comprises a step involving the introduction of at least one reactive agent bearing at least one hydrophobic group, before the deposition step and/or after said step.

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