公开(公告)号：US20200006543A1

公开(公告)日：2020-01-02

申请号：US16453118

申请日：2019-06-26

Applicant: EPISTAR CORPORATION

Inventor： Shang-Ju TU ,  Chia-Cheng LIU ,  Tsung-Cheng CHANG ,  Ya-Yu YANG ,  Yu-Jiun SHEN ,  Jen-Inn CHYI

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/417

Abstract: A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

公开(公告)号：US20210359123A1

公开(公告)日：2021-11-18

申请号：US17387433

申请日：2021-07-28

Applicant: EPISTAR CORPORATION

Inventor： Ya-Yu YANG ,  Shang-Ju TU ,  Tsung-Cheng CHANG ,  Chia-Cheng LIU

IPC: H01L29/78 ,  H01L29/778

Abstract: A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0

公开(公告)号：US20190103482A1

公开(公告)日：2019-04-04

申请号：US15720564

申请日：2017-09-29

Applicant: EPISTAR CORPORATION

Inventor： Ya-Yu YANG ,  Shang-Ju TU ,  Tsung-Cheng CHANG ,  Chia-Cheng LIU

IPC: H01L29/78

Abstract: A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises Alx1Ga1-x1N, a material of the first functional layer comprises Alx2Ga1-x2N, 0

公开(公告)号：US20150123151A1

公开(公告)日：2015-05-07

申请号：US14594761

申请日：2015-01-12

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Kuen-Ru CHUANG ,  Shu-Wen SUNG ,  Chia-Cheng LIU ,  Chao-Nien HUANG ,  Shane-Shyan WEY ,  Chih-Chiang LU ,  Ming-Jiunn JOU

IPC: H01L33/16 ,  H01L33/42

CPC classification number: H01L33/16 ,  H01L21/2007 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42

Abstract: A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.

Abstract translation: 发光结构包括透明基板; 形成在所述透明基板上并且具有与所述第一顶表面基本上共面的第一顶表面和第二顶表面的第一透明导电层; 形成在所述第一顶表面上的第一发光叠层; 以及直接形成在第二顶面上的第一电极。

公开(公告)号：US20130115725A1

公开(公告)日：2013-05-09

申请号：US13730130

申请日：2012-12-28

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Kuen-Ru CHUANG ,  Shu-Wen SUNG ,  Chia-Cheng LIU ,  Chao-Nien HUANG ,  Shane-Shyan Wey ,  Chih-Chiang Lu ,  Ming-Jiunn Jou

IPC: H01L33/02

CPC classification number: H01L33/16 ,  H01L21/2007 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42

Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

Abstract translation: 一种具有透明基板的发光二极管及其制造方法。 发光二极管通过产生两个半导体多层并结合而形成。 第一半导体多层形成在非透明基板上。 通过在透明基板上形成非晶界面层来形成第二半导体多层。 将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。