公开(公告)号：EP1630849A2

公开(公告)日：2006-03-01

申请号：EP05076917.3

申请日：2005-08-22

Applicant: FEI COMPANY

Inventor： Chandler, Clive D. ,  Smith Noel

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  B81C1/00531 ,  C23C16/047 ,  C23C16/345 ,  C23C16/401 ,  C23F4/00 ,  H01J37/32357

Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Abstract translation: 与带电粒子束沉积和蚀刻相比，局部等离子体处理的方法提高了处理速度并减少了工件损伤。 在一个实施例中，等离子体射流离开等离子体产生室并激活反应气体。 等离子体和反应气体射流影响和处理工件。 因为反应气体中的等离子体和离子可以具有低的动能，所以可能很少或没有表面损伤。 这对于沉积工艺特别有用。 当需要蚀刻材料时，反应离子可以更有活力以增强蚀刻。

公开(公告)号：EP1630849B1

公开(公告)日：2011-11-02

申请号：EP05076917.3

申请日：2005-08-22

Applicant: FEI COMPANY

Inventor： Chandler, Clive D. ,  Smith Noel

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  B81C1/00531 ,  C23C16/047 ,  C23C16/345 ,  C23C16/401 ,  C23F4/00 ,  H01J37/32357

公开(公告)号：EP1630849A3

公开(公告)日：2009-06-03

申请号：EP05076917.3

申请日：2005-08-22

Applicant: FEI COMPANY

Inventor： Chandler, Clive D. ,  Smith Noel

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  B81C1/00531 ,  C23C16/047 ,  C23C16/345 ,  C23C16/401 ,  C23F4/00 ,  H01J37/32357

Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.