公开(公告)号：EP1630849A2

公开(公告)日：2006-03-01

申请号：EP05076917.3

申请日：2005-08-22

Applicant: FEI COMPANY

Inventor： Chandler, Clive D. ,  Smith Noel

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  B81C1/00531 ,  C23C16/047 ,  C23C16/345 ,  C23C16/401 ,  C23F4/00 ,  H01J37/32357

Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Abstract translation: 与带电粒子束沉积和蚀刻相比，局部等离子体处理的方法提高了处理速度并减少了工件损伤。 在一个实施例中，等离子体射流离开等离子体产生室并激活反应气体。 等离子体和反应气体射流影响和处理工件。 因为反应气体中的等离子体和离子可以具有低的动能，所以可能很少或没有表面损伤。 这对于沉积工艺特别有用。 当需要蚀刻材料时，反应离子可以更有活力以增强蚀刻。

公开(公告)号：EP2808885A1

公开(公告)日：2014-12-03

申请号：EP14169930.6

申请日：2014-05-27

Applicant: FEI COMPANY

Inventor： Rue, Chad ,  Chandler, Clive D.

IPC: H01J37/305 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract translation: 要除去使用聚焦离子束系统，该方法包括限定目标区域用于半导体器件的改进的平面解处理的方法和系统，所述目标区域包括一个混合的铜和半导体器件的电介质层的至少一部分。 引向目标区域中的前体气体; 和朝向引导在所述前体气体存在的目标区域中的聚焦的离子束，从而去除第一混合铜和介电层的至少一部分和在生产研磨的目标区域中的一致平滑地面。 所述前体气体使聚焦离子束铣削的铜以基本上相同的速率作为电介质。 在优选实施方案中，前体气体包括硝基乙酸甲酯。 在可替代的实施方案中，前体气体是乙酸甲酯，乙酸乙酯，硝基乙酸乙酯，乙酸丙酯，硝基乙丙酯，乙基硝基酯，甲基methoxyacetates，或甲氧基乙酰氯。

公开(公告)号：EP1630849B1

公开(公告)日：2011-11-02

申请号：EP05076917.3

申请日：2005-08-22

Applicant: FEI COMPANY

Inventor： Chandler, Clive D. ,  Smith Noel

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  B81C1/00531 ,  C23C16/047 ,  C23C16/345 ,  C23C16/401 ,  C23F4/00 ,  H01J37/32357

公开(公告)号：EP2808885B1

公开(公告)日：2018-09-12

申请号：EP14169930.6

申请日：2014-05-27

Applicant: FEI COMPANY

Inventor： Rue, Chad ,  Chandler, Clive D.

IPC: H01J37/305 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

公开(公告)号：EP1630849A3

公开(公告)日：2009-06-03

申请号：EP05076917.3

申请日：2005-08-22

Applicant: FEI COMPANY

Inventor： Chandler, Clive D. ,  Smith Noel

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  B81C1/00531 ,  C23C16/047 ,  C23C16/345 ,  C23C16/401 ,  C23F4/00 ,  H01J37/32357

Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.