公开(公告)号：US20180258551A1

公开(公告)日：2018-09-13

申请号：US15761197

申请日：2016-08-31

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Andrea Dittmar ,  Carsten Hartmann ,  Jürgen Wollweber ,  Matthias Bickermann

IPC: C30B29/40 ,  C30B23/06 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L29/15

CPC classification number: C30B29/403 ,  C30B23/005 ,  C30B23/066 ,  H01L21/02389 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/343

Abstract: The invention concerns a method for the production of single crystal aluminium nitride doped with scandium and/or yttrium, with scandium and/or yttrium contents in the range 0.01 atom % to 50 atom % with respect to 100 atom % of the total quantity of the doped aluminium nitride, characterized in that in a crucible, in the presence of a gas selected from nitrogen or a noble gas, or a mixture of nitrogen and a noble gas: a doping material selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and a source material formed from aluminium nitride are sublimated and recondensed onto a seed material which is selected from aluminium nitride or aluminium nitride doped with scandium and/or yttrium. The invention also concerns a corresponding device as well as the corresponding single crystal products and their use, whereupon the basis for novel components based on layers or stacks of layers of aluminium gallium nitride, indium aluminium nitride or indium aluminium gallium nitride is generated.