公开(公告)号：US11028501B2

公开(公告)日：2021-06-08

申请号：US15541764

申请日：2015-12-16

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Zbigniew Galazka ,  Reinhard Uecker ,  Detlef Klimm ,  Matthias Bickermann

IPC: C30B29/16 ,  C30B11/00 ,  C30B15/08 ,  C30B15/34 ,  C30B17/00 ,  C30B15/20

Abstract: A method for growing beta phase of gallium oxide (β-Ga2O3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga2O3 or at the melting temperature (MT) or after complete melting of the Ga2O3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga2O3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).

公开(公告)号：US20180258551A1

公开(公告)日：2018-09-13

申请号：US15761197

申请日：2016-08-31

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Andrea Dittmar ,  Carsten Hartmann ,  Jürgen Wollweber ,  Matthias Bickermann

IPC: C30B29/40 ,  C30B23/06 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L29/15

CPC classification number: C30B29/403 ,  C30B23/005 ,  C30B23/066 ,  H01L21/02389 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/343

Abstract: The invention concerns a method for the production of single crystal aluminium nitride doped with scandium and/or yttrium, with scandium and/or yttrium contents in the range 0.01 atom % to 50 atom % with respect to 100 atom % of the total quantity of the doped aluminium nitride, characterized in that in a crucible, in the presence of a gas selected from nitrogen or a noble gas, or a mixture of nitrogen and a noble gas: a doping material selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and a source material formed from aluminium nitride are sublimated and recondensed onto a seed material which is selected from aluminium nitride or aluminium nitride doped with scandium and/or yttrium. The invention also concerns a corresponding device as well as the corresponding single crystal products and their use, whereupon the basis for novel components based on layers or stacks of layers of aluminium gallium nitride, indium aluminium nitride or indium aluminium gallium nitride is generated.