公开(公告)号：WO2017050532A1

公开(公告)日：2017-03-30

申请号：PCT/EP2016/070539

申请日：2016-08-31

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： DITTMAR, Andrea ,  HARTMANN, Carsten ,  WOLLWEBER, Jürgen ,  BICKERMANN, Matthias

IPC: C30B23/00 ,  C30B23/06 ,  C30B29/40

CPC classification number: C30B29/403 ,  C30B23/005 ,  C30B23/066

Abstract: Die Erfindung betrifft ein Verfahren zur Erzeugung von einkristallinem, mit Scandium und/oder Yttrium dotiertem Aluminiumnitrid mit Gehalten an Scandium und/oder Yttrium zwischen 0,01 und 50 Atom-% bezogen auf 100 Atom-% Gesamtstoffmenge des dotierten Aluminiumnitrids, dadurch gekennzeichnet, dass in Gegenwart eines Gases, ausgewählt aus Stickstoff oder Edelgas, oder einer Mischung aus Stickstoff und Edelgas, in einem Tiegel - ein Dotierungsmaterial, ausgewählt aus Scandium, Yttrium, Scandiumnitrid oder Yttriumnitrid oder eine Mischung daraus und - ein Quellmaterial aus Aluminiumnitrid sublimiert und auf einem Keimmaterial rekondensiert werden, welches ausgewählt ist aus Aluminiumnitrid oder mit Scandium und/oder Yttrium dotiertem Aluminiumnitrid. Ebenfalls betrifft die Erfindung eine entsprechende Vorrichtung, sowie die entsprechenden einkristallinen Produkte und deren Verwendung, wodurch die Grundlage für neuartige Bauelemente auf Basis von Schichten oder Schichtstapel von Aluminiumgalliumnitrid, Indiumaluminiumnitrid oder Indiumaluminiumgalliumnitrid geschaffen wurde.

Abstract translation: 本发明涉及一种用于掺杂钪和/或钇的氮化铝基于所述掺杂的氮化铝的物质的总量的100原子％具有0.01和50原子％之间钪和/或钇的含量生产单晶，其特征在于在于，在从氮气或稀有气体，或氮气和稀有气体的混合物选择的，在坩埚中的气体的存在下 - 升华氮化铝的源材料 - 从钪，钇，钪或钇或其混合物和选定的掺杂剂 和再冷凝在其上从氮化铝或钪和/或钇掺杂的氮化铝中选择的种子材料。 此外，本发明提供了一种相应的设备，和相应的单结晶的产品和它们的使用，从而为基于层或氮化铝镓，氮化铟铝镓或Indiumaluminiumnitrid的层的层叠新颖的装置的基础上被创建涉及。

公开(公告)号：WO2016110385A1

公开(公告)日：2016-07-14

申请号：PCT/EP2015/079938

申请日：2015-12-16

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： GALAZKA, Zbigniew ,  UECKER, Reinhard ,  KLIMM, Detlef ,  BICKERMANN, Matthias

IPC: C30B29/16 ,  C30B15/20 ,  C30B17/00 ,  C30B11/00

CPC classification number: C30B29/16 ,  C30B11/005 ,  C30B11/006 ,  C30B15/08 ,  C30B15/20 ,  C30B15/34 ,  C30B17/00

Abstract: A method for growing beta phase of gallium oxide (β-Ga 2 O 3 ) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2', C2") in the concentration range (SC) of 5 - 100 vol. % below the melting temperature (MT) of Ga 2 O 3 or at the melting temperature (MT) or after complete melting of the Ga 2 O 3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga 2 O 3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2', C2") is maintained within the oxygen concentration range (SC).

Abstract translation: 从包含在由绝热体包围并被加热器加热的金属坩埚内的熔体中生长氧化镓（β-Ga 2 O 3）单晶的β相的方法。 提供到生长炉中的生长气氛具有可变的氧浓度或分压，使得氧浓度达到浓度范围（SC）为5-100的生长氧浓度值（C2，C2'，C2“） 体积％低于Ga 2 O 3的熔融温度（MT），在熔融温度（MT）下或完全熔化之后，适于最小化金属镓的量的产生，并因此与金属坩埚形成共晶，在晶体生长步骤期间 在生长温度（GT）下，熔体中的β-Ga2O3单晶的生长氧浓度值（C2，C2'，C2“）保持在氧浓度范围（SC）内。

公开(公告)号：EP3242965A1

公开(公告)日：2017-11-15

申请号：EP15810626.0

申请日：2015-12-16

Applicant: Forschungsverbund Berlin E.V.

Inventor： GALAZKA, Zbigniew ,  UECKER, Reinhard ,  KLIMM, Detlef ,  BICKERMANN, Matthias

IPC: C30B29/16 ,  C30B15/20 ,  C30B17/00 ,  C30B11/00

CPC classification number: C30B29/16 ,  C30B11/005 ,  C30B11/006 ,  C30B15/08 ,  C30B15/20 ,  C30B15/34 ,  C30B17/00

Abstract: A method for growing beta phase of gallium oxide (²-Ga 2 O 3 ) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2', C2") in the concentration range (SC) of 5 - 100 vol. % below the melting temperature (MT) of Ga 2 O 3 or at the melting temperature (MT) or after complete melting of the Ga 2 O 3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the ²-Ga 2 O 3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2', C2") is maintained within the oxygen concentration range (SC).

公开(公告)号：EP3242965B1

公开(公告)日：2019-06-26

申请号：EP15810626.0

申请日：2015-12-16

Applicant: Forschungsverbund Berlin E.V.

Inventor： GALAZKA, Zbigniew ,  UECKER, Reinhard ,  KLIMM, Detlef ,  BICKERMANN, Matthias

IPC: C30B29/16 ,  C30B15/20 ,  C30B17/00 ,  C30B11/00

公开(公告)号：EP3353338A1

公开(公告)日：2018-08-01

申请号：EP16759760.8

申请日：2016-08-31

Applicant: Forschungsverbund Berlin E.V.

Inventor： DITTMAR, Andrea ,  HARTMANN, Carsten ,  WOLLWEBER, Jürgen ,  BICKERMANN, Matthias

IPC: C30B23/00 ,  C30B23/06 ,  C30B29/40

CPC classification number: C30B29/403 ,  C30B23/005 ,  C30B23/066 ,  H01L21/02389 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/343

Abstract: The invention relates to a method for generating single-crystalline aluminium nitride doped with scandium and/or yttrium, with scandium and/or yttrium contents of between 0.01 and 50 at.% with respect to 100 at.% of the total amount of substance of the doped aluminium nitride, characterized in that, in a crucible, in the presence of a gas selected from nitrogen or noble gas or a mixture of nitrogen and noble gas, a doping material selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and a source material of aluminium nitride are sublimated and recondensed on a seed material which is selected from aluminium nitride or aluminium nitride doped with scandium and/or yttrium. The invention likewise relates to a corresponding device, and the corresponding single-crystalline products and the use thereof, creating the basis for novel components based on layers or stacks of layers of aluminium gallium nitride, indium aluminium nitride or indium aluminium gallium nitride.