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公开(公告)号：WO2022028800A1
公开(公告)日：2022-02-10
申请号：PCT/EP2021/068687
申请日：2021-07-06
Applicant: FORSCHUNGSVERBUND BERLIN E.V.
Inventor： KRÄNKEL, Christian , HAURAT, Emile , UVAROVA, Anastasia , KLIMM, Detlef , GUGUSCHEV, Christo
IPC: C30B15/10 , C30B29/22 , C30B35/00 , C30B35/002
Abstract: Die Erfindung betrifft das Züchten eines Seltenerd-Sesquioxid-Kristalls mit kubischer Kristallstruktur aus einer Schmelze. Der Seltenerd-Sesquioxid-Kristall enthält wenigstens 5 % Yttriumoxid und wenigstens 5 % Scandiumoxid, so dass seine Liquidustemperatur unter 2400 °C beträgt. Alternativ kann der Seltenerd-Sesquioxid-Kristall auch Yttriumoxid und wenigstens 5 % Scandiumoxid enthalten und die Anteile von Yttriumoxid und Scandi- umoxid können in einem Ausgangsmaterial so ausgewählt sein, dass der zu züchtende Selternerd-Sesquioxid-Kristall eine Liquidustemperatur von unter 2400 °C hat. Das Ausgangsmaterial kann in einem Tiegel, der aus einem Material besteht, welches eine Schmelztemperatur von unter 3000 °C hat, bei einer Temperatur von 2400 °C oder weniger geschmolzen werden. Der Seltenerd-Sesquioxid-Kristall kann aus dem geschmolzenen Ausgangsmaterial unter Verwenden eines Kristallzüchtungsverfahrens, beispielsweise des Czochralski-Verfahrens oder des HEM-Verfahrens gezüchtet werden. Auch ein tiegelfreies Züchten des Seltenerd-Sesquioxid-Kristalls ist bei einer Temperatur von 2400 °C oder we- niger möglich, beispielsweise mittels optischem Zonenschmelzen.
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Patent Agency Ranking2.发明申请METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE (β-Ga2O3) SINGLE CRYSTALS FROM THE MELT CONTAINED WITHIN A METAL CRUCIBLE 审中-公开用于从金属坩埚中包含的熔体中生长氧化铝（β-Ga2O3）单晶的相晶相的方法
公开(公告)号：WO2016110385A1
公开(公告)日：2016-07-14
申请号：PCT/EP2015/079938
申请日：2015-12-16
Applicant: FORSCHUNGSVERBUND BERLIN E.V.
Inventor： GALAZKA, Zbigniew , UECKER, Reinhard , KLIMM, Detlef , BICKERMANN, Matthias
CPC classification number: C30B29/16 , C30B11/005 , C30B11/006 , C30B15/08 , C30B15/20 , C30B15/34 , C30B17/00
Abstract: A method for growing beta phase of gallium oxide (β-Ga 2 O 3 ) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2', C2") in the concentration range (SC) of 5 - 100 vol. % below the melting temperature (MT) of Ga 2 O 3 or at the melting temperature (MT) or after complete melting of the Ga 2 O 3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga 2 O 3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2', C2") is maintained within the oxygen concentration range (SC).
Abstract translation: 从包含在由绝热体包围并被加热器加热的金属坩埚内的熔体中生长氧化镓（β-Ga 2 O 3）单晶的β相的方法。 提供到生长炉中的生长气氛具有可变的氧浓度或分压，使得氧浓度达到浓度范围（SC）为5-100的生长氧浓度值（C2，C2'，C2“） 体积％低于Ga 2 O 3的熔融温度（MT），在熔融温度（MT）下或完全熔化之后，适于最小化金属镓的量的产生，并因此与金属坩埚形成共晶，在晶体生长步骤期间 在生长温度（GT）下，熔体中的β-Ga2O3单晶的生长氧浓度值（C2，C2'，C2“）保持在氧浓度范围（SC）内。
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3.发明公开METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE (BETA-GA2O3) SINGLE CRYSTALS FROM THE MELT CONTAINED WITHIN A METAL CRUCIBLE 有权从金属坩埚内含有的熔体生长氧化镓（β-GA 2 O 3）单晶的β相的方法
公开(公告)号：EP3242965A1
公开(公告)日：2017-11-15
申请号：EP15810626.0
申请日：2015-12-16
Applicant: Forschungsverbund Berlin E.V.
Inventor： GALAZKA, Zbigniew , UECKER, Reinhard , KLIMM, Detlef , BICKERMANN, Matthias
CPC classification number: C30B29/16 , C30B11/005 , C30B11/006 , C30B15/08 , C30B15/20 , C30B15/34 , C30B17/00
Abstract: A method for growing beta phase of gallium oxide (²-Ga 2 O 3 ) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2', C2") in the concentration range (SC) of 5 - 100 vol. % below the melting temperature (MT) of Ga 2 O 3 or at the melting temperature (MT) or after complete melting of the Ga 2 O 3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the ²-Ga 2 O 3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2', C2") is maintained within the oxygen concentration range (SC).
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公开(公告)号：EP4193008A1
公开(公告)日：2023-06-14
申请号：EP21748512.7
申请日：2021-07-06
Applicant: Forschungsverbund Berlin E.V.
Inventor： KRÄNKEL, Christian , HAURAT, Emile , UVAROVA, Anastasia , KLIMM, Detlef , GUGUSCHEV, Christo
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公开(公告)号：EP3242965B1
公开(公告)日：2019-06-26
申请号：EP15810626.0
申请日：2015-12-16
Applicant: Forschungsverbund Berlin E.V.
Inventor： GALAZKA, Zbigniew , UECKER, Reinhard , KLIMM, Detlef , BICKERMANN, Matthias
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6.发明公开VERFAHREN ZUR HERSTELLUNG VON FLUORHALTIGEN KRISTALLEN UND/ODER KRISTALLMATERIALIEN 审中-公开用于生产含氟晶体和/或晶体材料
公开(公告)号：EP1264012A1
公开(公告)日：2002-12-11
申请号：EP01919157.6
申请日：2001-03-02
Applicant: Forschungsverbund Berlin e.V.
Inventor： SPEIT, Burkhard , REICHE, Peter , KLIMM, Detlef , DONECKER, Jörg , GANSCHOW, Steffen , UECKER, Reinhard , MÜLLER, Bernd
CPC classification number: C30B33/00 , C30B29/12 , Y10T117/10
Abstract: The invention relates to a method for producing crystals and/or crystal materials. According to said method, unwanted impurities are removed from the crystal and/or the material by means of a purification agent or a getter. Substances containing elementary fluorine and/or reactive fluorine are used as the purification agent or getter. Preferred getters are XeF2 and/or carbon fluoride. Crystals obtained in this way are suitable for use as optical components.
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