公开(公告)号：US20160322538A1

公开(公告)日：2016-11-03

申请号：US15105541

申请日：2014-12-17

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Sven EINFELDT ,  Luca REDAELLI ,  Michael KNEISSL

IPC: H01L33/40 ,  H01S5/323 ,  H01L33/58 ,  H01S5/22 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341

Abstract: The invention relates to a method for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact.The method is used for forming at least one metal contact (60) on a surface (11) of a semiconductor (10) and comprises the steps of: applying a metal layer (20) onto the semiconductor surface (11), applying a mask (40, 50) onto the metal layer (20), and structuring at least the metal layer (20) using the mask (40, 50), wherein lateral deposits (21) of the metal are produced on the mask by the structuring so that the mask is embedded between the deposits (21) and the structured metal layer (20′) after the structuring. The method is characterized by a conductive hard mask.Since the mask is conductive, it can remain embedded in the metal. It is not necessary to remove the deposits. The deposits and the mask form a part of the contact.

Abstract translation: 由于掩模是导电的，它可以保持嵌入在金属中。 没有必要去除沉积物。 沉积物和掩模形成接触的一部分。