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公开(公告)号：DE102005020072A1
公开(公告)日：2006-11-02
申请号：DE102005020072
申请日：2005-04-22
Applicant: FORSCHUNGSVERBUND BERLIN EV
Inventor： EHRENTRAUT LUTZ , HERTEL INGOLF , ROSENFELD ARKADI
Abstract: The invention relates to a method for finely polishing/structuring thermosensitive dielectric materials, in particular materials exhibiting a low thermal expansion coefficient, by a laser beam consisting in directing an intensive ultrashort laser beam to a processable material surface, in adjusting the action time within a range from 10-13 s to 10-11 s and a laser pulse energy in such a way that it is less than an ablation threshold but sufficient for provoking a Coulomb explosion. The inventive method makes it possible to carry out a material removal within a nanometer range by means of laser ultrashort pulses ranging between picoseconds and subpicoseconds, wherein the material surface is finely polished during a pre-ablation process step (removal less than the ablation range) and the processable surface is low-heated (approximately up to 10 ° C., only) due to the extremely shot laser beam action time.
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公开(公告)号：DE102005020072B4
公开(公告)日：2007-12-06
申请号：DE102005020072
申请日：2005-04-22
Applicant: FORSCHUNGSVERBUND BERLIN EV
Inventor： EHRENTRAUT LUTZ , HERTEL INGOLF , ROSENFELD ARKADI
Abstract: The invention relates to a method for finely polishing/structuring thermosensitive dielectric materials, in particular materials exhibiting a low thermal expansion coefficient, by a laser beam consisting in directing an intensive ultrashort laser beam to a processable material surface, in adjusting the action time within a range from 10-13 s to 10-11 s and a laser pulse energy in such a way that it is less than an ablation threshold but sufficient for provoking a Coulomb explosion. The inventive method makes it possible to carry out a material removal within a nanometer range by means of laser ultrashort pulses ranging between picoseconds and subpicoseconds, wherein the material surface is finely polished during a pre-ablation process step (removal less than the ablation range) and the processable surface is low-heated (approximately up to 10 ° C., only) due to the extremely shot laser beam action time.
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Patent Agency Ranking
公开(公告)号：DE102018201596A1
公开(公告)日：2019-08-08
申请号：DE102018201596
申请日：2018-02-02
Applicant: FORSCHUNGSVERBUND BERLIN EV
IPC: B23K26/06 , B23K26/352
Abstract: Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur direkten Strukturierung mittels Laserstrahlung. Es wird ein Verfahren zum Erzeugen laserinduzierter optischer oberflächennaher Strukturierungen im Material eines Körpers vorgeschlagen, welches die Schritte umfasst: Erzeugen von gepulster Laserstrahlung;Fokussieren der gepulsten Laserstrahlung (1300) mittels einer Fokussieroptik (1400) zum Erzeugen fokussierten Laserstrahlung (1310);wobei Einstrahlen der gepulsten fokussierten Laserstrahlung (1310) auf den Körper;wobei Strahlen der gepulsten fokussierten Laserstrahlung (1310), die beim Einstrahlen auf das Material (1100) des Körpers (1101) auf eine Oberfläche (1150) des Materials (1100) des Körpers (1101) gerichtet sind, mit der Oberfläche (1150) am Auftreffpunkt einen Winkel (β) einschließen, welcher kleiner oder gleich dem maximalen Öffnungswinkel (α) der Fokussieroptik ist. Ferner wird eine Vorrichtung (1000) zur Erzeugung solcher oberflächennaher Strukturierungen geschaffen.
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公开(公告)号：AT527080T
公开(公告)日：2011-10-15
申请号：AT06725207
申请日：2006-03-21
Applicant: FORSCHUNGSVERBUND BERLIN EV
Inventor： EHRENTRAUT LUTZ , HERTEL INGOLF , ROSENFELD ARKADI
Abstract: The invention relates to a method for finely polishing/structuring thermosensitive dielectric materials, in particular materials exhibiting a low thermal expansion coefficient, by a laser beam consisting in directing an intensive ultrashort laser beam to a processable material surface, in adjusting the action time within a range from 10-13 s to 10-11 s and a laser pulse energy in such a way that it is less than an ablation threshold but sufficient for provoking a Coulomb explosion. The inventive method makes it possible to carry out a material removal within a nanometer range by means of laser ultrashort pulses ranging between picoseconds and subpicoseconds, wherein the material surface is finely polished during a pre-ablation process step (removal less than the ablation range) and the processable surface is low-heated (approximately up to 10 ° C., only) due to the extremely shot laser beam action time.
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公开(公告)号：DE10125206B4
公开(公告)日：2005-03-10
申请号：DE10125206
申请日：2001-05-14
Applicant: FORSCHUNGSVERBUND BERLIN EV
Inventor： BOYLE MARK , HERTEL INGOLF , KORN GEORG , ROSENFELD ARKADI , RAZWAN STOIAN , THOS ANDREAS
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6.发明专利
公开(公告)号：CA2604641A1
公开(公告)日：2006-10-26
申请号：CA2604641
申请日：2006-03-21
Applicant: FORSCHUNGSVERBUND BERLIN EV
Inventor： ROSENFELD ARKADI , HERTEL INGOLF , EHRENTRAUT LUTZ
Abstract: The invention relates to a method for finely polishing/structuring thermosensitive dielectric materials, in particular materials exhibiting a low thermal expansion coefficient, by a laser beam consisting in directing an intensive ultrashort laser beam to a processable material surface, in adjusting the action time within a range from 10-13 s to 10-11 s and a laser pulse energy in such a way that it is less than an ablation threshold but sufficient for provoking a Coulomb explosion. The inventive method makes it possible to carry out a material removal within a nanometer range by means of laser ultrashort pulses ranging between picoseconds and subpicoseconds, wherein the material surface is finely polished during a pre-ablation process step (removal less than the ablation range) and the processable surface is low-heated (approximately up to 10 ° C., only) due to the extremely shot laser beam action time.
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公开(公告)号：DE10125206A1
公开(公告)日：2002-12-05
申请号：DE10125206
申请日：2001-05-14
Applicant: FORSCHUNGSVERBUND BERLIN EV
Inventor： BOYLE MARK , HERTEL INGOLF , KORN GEORG , ROSENFELD ARKADI , RAZWAN STOIAN , THOS ANDREAS
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