公开(公告)号：PL1841902T3

公开(公告)日：2011-04-29

申请号：PL06707740

申请日：2006-01-18

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： RICHTER EBERHARD ,  TRÄNKLE GÜNTHER ,  WEYERS MARKUS

IPC: C30B25/18 ,  C30B29/40

公开(公告)号：DE10136605B4

公开(公告)日：2007-05-03

申请号：DE10136605

申请日：2001-07-16

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： RICHTER EBERHARD

IPC: C30B29/38 ,  C30B25/00 ,  C30B25/02

公开(公告)号：DE102005041643A1

公开(公告)日：2007-03-01

申请号：DE102005041643

申请日：2005-08-29

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： HENNIG CHRISTIAN ,  WEYERS MARKUS ,  RICHTER EBERHARD ,  TRAENKLE GUENTHER

IPC: H01L21/20 ,  C30B23/02 ,  C30B31/06 ,  H01L33/00

Abstract: Applied to an output layer (1) to produce an epitaxy isolated semiconductor substrate (6), a masking layer (2) with many holes is subjected by a semiconductor material to lateral overgrowth. The output layer, the masking layer and the semiconductor substrate are cooled down. Material for forming the masking layer partly consists of tungsten silicide/silicide nitride. Independent claims are also included for: (a) an isolated semiconductor substrate for producing electronic or opto-electronic components; (b) a masking layer of tungsten silicide/silicide nitride for producing an isolated semiconductor substrate on an output substrate.

公开(公告)号：DE102005003884A1

公开(公告)日：2006-08-03

申请号：DE102005003884

申请日：2005-01-24

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： RICHTER EBERHARD ,  TRAENKLE GUENTHER ,  WEYERS MARKUS

IPC: C30B25/18 ,  C30B29/38 ,  H01L33/00

Abstract: The invention relates to a method for producing c-plane GaN substrates or Al x Ga 1-x N substrates using an original substrate. Said method is characterized by the following steps: a tetragonal (100)-oriented or (-100)-oriented original LiAlO 2 substrate is used; said original substrate is nitrided in a nitrogen compound-containing atmosphere at temperatures lying below the decomposition temperature of LiAlO 2 ; a nucleation layer is grown at temperatures ranging between 500° C. and 700° C. by adding GaCl or AlCl or a mixture of GaCl and AlCl in a nitrogen compound-containing atmosphere; single-crystalline c-plane-oriented GaN or Al x Ga 1-x N is grown on the nucleation layer at temperatures ranging between 900° C. and 1050° C. by means of hydride vapor phase epitaxy (HVPE) with GaCl or AlCl or a GaCl/AlCl mixture in a nitrogen compound-containing atmosphere; and the substrate is cooled.

公开(公告)号：DE502006008325D1

公开(公告)日：2010-12-30

申请号：DE502006008325

申请日：2006-01-18

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： RICHTER EBERHARD ,  TRAENKLE GUENTHER ,  WEYERS MARKUS

IPC: C30B25/18 ,  C30B29/40

公开(公告)号：DE10136605A1

公开(公告)日：2003-04-30

申请号：DE10136605

申请日：2001-07-16

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： RICHTER EBERHARD

IPC: C30B25/02 ,  C30B29/38 ,  C30B25/00

Abstract: Process comprises growing gallium nitride on sapphire substrate from gallium supply in a reactor using nitrogen as protective gas in presence of ammonia and hydrogen chloride gas at constant V/III partial pressure of 30-40 and substrate temperature of 550-650 deg C for 5-15 minutes; increasing substrate temperature to 1000-1090 deg C while maintaining protective gas atmosphere in presence of ammonia; maintaining process conditions for 5-20 minutes; and growing gallium nitride while maintaining process conditions with renewed flow of hydrogen chloride gas. Preferred Features: The process is carried out in a multiple zone horizontal quartz reactor. The substrate is purified in a nitrogen atmosphere by heating to 1000-1100 deg C.