公开(公告)号：KR20200133018A

公开(公告)日：2020-11-25

申请号：KR20207033190

申请日：2017-03-06

Applicant: FUJIFILM CORP

Inventor： MIZUMURA MASATOSHI ,  KATOU TAKASHI ,  HOSHINO WATARU

IPC: C09K19/60 ,  B32B7/02 ,  C09B31/043 ,  G02B5/30 ,  G02F1/1335

Abstract: 본발명의과제는, 우수한 2색비를갖는광흡수이방성막을형성할수 있는착색조성물, 2색성색소화합물, 광흡수이방성막, 적층체및 화상표시장치를제공하는것이다. 본발명의착색조성물은, 한센용해도파라미터가 17.5 이상이고, 또한하기식 (1)로나타나는구조를갖는 2색성색소화합물과, 액정성화합물을함유한다. TIFFpat00019.tif6126 상기식 (1) 중, A1, A2 및 A3은각각독립적으로, 치환기를갖고있어도되는 2가의방향족기를나타낸다. 단, A1, A2 및 A3 중어느하나가치환기를갖고있어도되는 2가의티에노싸이아졸기를나타낸다. 상기식 (1) 중, L1 및 L2는각각독립적으로, 치환기를나타낸다.

公开(公告)号：EP2138898A4

公开(公告)日：2012-12-05

申请号：EP08740284

申请日：2008-04-11

Applicant: FUJIFILM CORP

Inventor： TARUTANI SHINJI ,  TSUBAKI HIDEAKI ,  MIZUTANI KAZUYOSHI ,  WADA KENJI ,  HOSHINO WATARU

IPC: G03F7/30 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/40 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325

公开(公告)号：JP2010054634A

公开(公告)日：2010-03-11

申请号：JP2008217354

申请日：2008-08-26

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  NISHIKAWA NAOYUKI ,  TARUYA SHINJI ,  YOSHITOME MASAHIRO

IPC: G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative resist composition which exhibits good sensitivity and good pattern shape and ensures little residue and little residual film in an unexposed portion, and a pattern forming method using the same. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound having a radical-polymerizable group and an alkali-soluble group, and (C) a photoradical generator. The pattern forming method using the same is also provided. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种显示出良好的灵敏度和良好的图案形状并且确保在未曝光部分中几乎没有残留物和少量残留膜的负性抗蚀剂组合物，以及使用其的图案形成方法。 解决方案：负型抗蚀剂组合物含有（A）碱溶性树脂，（B）具有自由基聚合性基团和碱溶性基团的化合物，（C）光自由基发生剂。 还提供了使用该图案形成方法的图案形成方法。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009251392A

公开(公告)日：2009-10-29

申请号：JP2008100758

申请日：2008-04-08

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TARUYA SHINJI ,  HOSHINO WATARU ,  YOSHITOME MASAHIRO

IPC: G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative resist composition less liable to cause a film thickness loss and pattern collapse and a pattern forming method. SOLUTION: The negative resist composition comprises: (A) an alkali-soluble resin; (B) a crosslinking agent which crosslinks an alkali-soluble resin under the action of an acid; (C1) a compound which allows a crosslinking reaction to proceed upon irradiation with actinic rays or radiation; (C2) a photoradical generator; and (D) a compound having a radical polymerizable group. The pattern forming method is also provided. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供不容易引起膜厚度损失和图案崩溃的负型抗蚀剂组合物和图案形成方法。 解决方案：负型抗蚀剂组合物包含：（A）碱溶性树脂; （B）在酸的作用下交联碱溶性树脂的交联剂; （C1）允许在用光化射线或辐射照射时进行交联反应的化合物; （C2）光电发生器; 和（D）具有自由基聚合性基团的化合物。 还提供了图案形成方法。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009098606A

公开(公告)日：2009-05-07

申请号：JP2008093998

申请日：2008-03-31

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  TARUYA SHINJI ,  TSUCHIMURA TOMOTAKA ,  YOSHITOME MASAHIRO

IPC: G03F7/032 ,  G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To solve the problems of the performance improving technique of microphotofabrication using far-ultraviolet light, particularly ArF excimer laser light of 193 nm wavelength, specifically to provide a negative resist composition which, even in fine pattern formation, avoids pattern collapse and exhibits good resolution, and to provide a pattern forming method using the composition. SOLUTION: The negative resist composition includes (A) an alkali-soluble resin, (B) a compound having a radical polymerizable group, and (C) a photoradical generator. The pattern forming method using the composition is also provided. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：为了解决使用远紫外线的微照片制造的性能改进技术，特别是193nm波长的ArF准分子激光器的问题，特别是提供一种负型抗蚀剂组合物，即使在精细图案形成中， 避免图案塌陷并显示出良好的分辨率，并提供使用该组合物的图案形成方法。 解决方案：负型抗蚀剂组合物包括（A）碱溶性树脂，（B）具有自由基聚合性基团的化合物和（C）光自由基发生剂。 还提供了使用该组合物的图案形成方法。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008281980A

公开(公告)日：2008-11-20

申请号：JP2007227976

申请日：2007-09-03

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： WADA KENJI ,  TSUBAKI HIDEAKI ,  TARUYA SHINJI ,  HOSHINO WATARU ,  MIZUTANI KAZUYOSHI

IPC: G03F7/30 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for stably forming a high-accuracy fine pattern to be used in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a resin composition to be used in the method and a developing solution to be used in the method. SOLUTION: The pattern forming method includes: (1) coating a resist composition that decreases the solubility in a negative developing solution upon irradiation with actinic rays or radiation; (2) exposing; and (3) developing with a negative developing solution. There are also provided the resist composition to be used in the method and the developing solution and a rinsing solution to be used in the method. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于稳定地形成用于诸如IC的半导体的制造过程中的高精度精细图案的方法，在制造液晶，热敏头和 或其他光制造方法中使用的方法中使用的树脂组合物和用于该方法的显影液。 图案形成方法包括：（1）在光化射线或辐射照射时，涂覆抗蚀剂组合物，其降低在显影液中的溶解度; （2）曝光; 和（3）用负显影液显影。 还提供了在该方法和显影液中使用的抗蚀剂组合物和用于该方法的冲洗溶液。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2012078501A

公开(公告)日：2012-04-19

申请号：JP2010222638

申请日：2010-09-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  MURAMATSU AYAKO

IPC: G02B5/30 ,  B32B7/02 ,  G02F1/13363

CPC classification number: G02B5/3016 ,  G02F2413/105

Abstract: PROBLEM TO BE SOLVED: To provide an alignment layer having reduced irregularity like interference fringes.SOLUTION: The alignment layer comprises a composition containing: a first polymer having a repeating unit having at least one hydrophilic group selected from a carboxyl group and its salt, sulfonic acid group and its salt, amino group and its salt, phosphoric acid group and its salt, phosphonic acid group and its salt, phosphinic acid group and its salt, hydroxyl group, amide group and sulfonamide group; and a second polymer having a repeating unit having an aromatic group. The mass proportion (r1) of the first polymer is higher than the mass proportion (r2) of the second polymer.

Abstract translation: 要解决的问题：提供具有减小的不规则性的对准层，如干涉条纹。 解决方案：取向层包括一种组合物，其含有：具有至少一个选自羧基及其盐的亲水基团的重复单元的第一聚合物，磺酸基及其盐，氨基及其盐，磷酸 基团及其盐，膦酸基及其盐，次膦酸基及其盐，羟基，酰胺基和磺酰胺基; 和具有具有芳基的重复单元的第二聚合物。 第一聚合物的质量比（r1）高于第二聚合物的质量比例（r2）。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009258506A

公开(公告)日：2009-11-05

申请号：JP2008109335

申请日：2008-04-18

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  YOSHITOME MASAHIRO ,  TARUYA SHINJI

IPC: G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative resist composition which ensures an adequate bridge margin (that is, substantially avoids the occurrence of the defect that patterns connect with each other).
SOLUTION: The negative resist composition contains (A) a resin whose solubility in an alkali developer decreases by the action of an acid, (B) a cationic polymerizable compound, (C) a cationic photopolymerization initiator, and (D) a compound which generates an acid upon irradiation with actinic rays or radiation. A pattern-forming method using the composition is also provided.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种确保足够的桥接裕度的负的抗蚀剂组合物（即，基本上避免了图案彼此连接的缺陷的发生）。 解决方案：负型抗蚀剂组合物含有（A）通过酸的作用使碱显影剂的溶解度降低的树脂，（B）阳离子聚合性化合物，（C）阳离子性光聚合引发剂，（D） 化合物，其在用光化射线或辐射照射时产生酸。 还提供了使用该组合物的图案形成方法。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009237378A

公开(公告)日：2009-10-15

申请号：JP2008084981

申请日：2008-03-27

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  TARUYA SHINJI ,  YOSHITOME MASAHIRO

IPC: G03F7/038 ,  C08F220/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative resist composition exhibiting excellent sensitivity, pattern profile and defocus latitude, and to provide a method for forming a pattern. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin having a repeating unit (a1), containing an alkali-soluble group in organic groups having a sulfonamide structure, organic groups having sulfonimide structure, organic groups having a dicarbonylmethylene structure and organic groups having a naphthol structure, and (a2) a repeating unit having an epoxy structure; (B) a compound having two or more epoxy structures in the molecule; and (C) a photo-acid generator. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供显示出优异的灵敏度，图案形状和散焦纬度的负光刻胶组合物，并提供形成图案的方法。 ＆lt; P＆gt;解决方案：负光刻胶组合物含有（A）具有重复单元（a1）的碱溶性树脂，其具有磺酰胺结构的有机基团中含有碱溶性基团，具有磺酰亚胺结构的有机基团，具有磺酰亚胺结构的有机基团 二羰基亚甲基结构和具有萘酚结构的有机基团，和（a2）具有环氧结构的重复单元; （B）分子中具有两个以上环氧结构的化合物; 和（C）光酸产生剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009098602A

公开(公告)日：2009-05-07

申请号：JP2008074733

申请日：2008-03-21

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： HOSHINO WATARU ,  YOSHITOME MASAHIRO

IPC: G03F7/027 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To solve the problems of the performance improving technique of microphotofabrication using far-ultraviolet light, particularly ArF excimer laser light of 193 nm wavelength, specifically to provide a negative resist composition which, even in fine pattern formation, avoids pattern collapse and exhibits good resolution. SOLUTION: The negative resist composition includes (A) an alkali-soluble resin, (B) a compound having a conjugated diene structure, and (C) a photo-cationic polymerization initiator. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：为了解决使用远紫外线的微照片制造的性能改进技术，特别是193nm波长的ArF准分子激光器的问题，特别是提供一种负型抗蚀剂组合物，即使在精细图案形成中， 避免图案崩溃，表现出良好的分辨率。 解决方案：负型抗蚀剂组合物包括（A）碱溶性树脂，（B）具有共轭二烯结构的化合物和（C）光阳离子聚合引发剂。 版权所有（C）2009，JPO＆INPIT