패턴 형성 방법, 전자 디바이스의 제조 방법, 및 적층체

    公开(公告)号:KR20180039671A

    公开(公告)日:2018-04-18

    申请号:KR20187006615

    申请日:2016-08-31

    Applicant: FUJIFILM CORP

    CPC classification number: G03F7/11 G03F7/038 G03F7/039 G03F7/20 G03F7/32 G03F7/38

    Abstract: 특히극미세의잔류패턴의형성에있어서, 막감소가적어, 높은해상력을얻을수 있는패턴형성방법, 상기패턴형성방법을포함하는전자디바이스의제조방법, 및상기패턴을형성하기위한적층체를제공한다. 패턴형성방법으로서, (a) 감활성광선성또는감방사선성조성물에의하여감활성광선성또는감방사선성막을형성하는공정, (b) 감활성광선성또는감방사선성막상에상층막형성용조성물에의하여상층막을형성하는공정, (c) 상층막이형성된감활성광선성또는감방사선성막을노광하는공정, 및 (d) 노광된감활성광선성또는감방사선성막을, 현상액으로현상하는공정을포함하고, 상층막형성용조성물이, 가교제를포함한다. 전자디바이스의제조방법은, 상기패턴형성방법을포함한다. 적층체는, 감활성광선성또는감방사선성막과, 가교제를포함하는상층막을갖는다.

    3.
    发明专利
    未知

    公开(公告)号:AT533086T

    公开(公告)日:2011-11-15

    申请号:AT07017721

    申请日:2007-09-11

    Applicant: FUJIFILM CORP

    Inventor: TSUBAKI HIDEAKI

    Abstract: A photosensitive composition contains: a compound capable of generating an acid upon irradiation with actinic rays or radiation; a basic compound represented by the formula (I-a) as defined herein; a basic compound represented by the formula (I-b) as defined herein; and a surfactant represented by the formula (II) as defined herein.

Patent Agency Ranking