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    Interconnection structure in semiconductor device
    3.
    发明公开
    Interconnection structure in semiconductor device 有权
    Verbindungsstruktur在Halbleitervorrichtung

    公开(公告)号：EP2264758A2

    公开(公告)日：2010-12-22

    申请号：EP10177318.2

    申请日：2002-12-05

    Applicant: Fujitsu Microelectronics Limited

    Inventor： Watanabe, Kenichi ,  Shimizu, Noriyoshi ,  Suzuki, Takashi

    IPC: H01L23/522 ,  H01L21/768

    CPC classification number: H01L21/76811 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76838 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5283 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There is provided a semiconductor device which comprises a second insulating film (29) formed on a substantially flat surface, on which a surface of a first wiring (36) and a surface of a first insulating film (95) are continued, to cover the first wiring (36), a wiring trench (28a) formed in the second insulating film (29), connection holes (38a) formed in the second insulating film (29) to extend from the wiring trench (28a) to the first wiring (36), dummy connection holes (38b) formed in the second insulating film (29) to extend from the wiring trench (28a) to a non-forming region of the first wiring, and a second wiring (39) buried in the connection holes (38a) and the wiring trench (28a) to be connected electrically to the first wiring (36) and also buried in the dummy connection holes (38b), and formed such that a surface of the second wiring (39) and a surface of the second insulating film (29) constitute a substantially flat surface.

    Abstract translation: 提供了一种半导体器件，其包括形成在基本上平坦的表面上的第二绝缘膜（29），第一布线（36）的表面和第一绝缘膜（95）的表面在其上连续覆盖 第一布线（36），形成在第二绝缘膜（29）中的布线沟槽（28a），形成在第二绝缘膜（29）中的布线沟槽（28a）延伸到第一布线（ 36），形成在第二绝缘膜（29）中的从布线沟槽（28a）延伸到第一布线的非成形区域的虚设连接孔（38b）和埋在连接孔 （38a）和与第一布线（36）电连接并且还埋入虚拟连接孔（38b）中的布线沟槽（28a），并且形成为使得第二布线（39）的表面和 第二绝缘膜（29）构成基本平坦的表面。

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