Metal-infiltrated polycrystalline diamond composite tool formed from coated diamond particles.

    公开(公告)号:ZA200307114B

    公开(公告)日:2004-07-01

    申请号:ZA200307114

    申请日:2003-09-11

    Applicant: GEN ELECTRIC

    Abstract: A metal-infiltrated polycrystalline diamond composite tool comprising a plurality of diamond grains forming a continuous polycrystalline diamond matrix, a metallic phase being substantially palladium-free and contiguous to the continuous polycrystalline diamond matrix, wherein the metallic phase interpenetrates the continuous polycrystalline diamond matrix and substantially wets an outer surface of the continuous polycrystalline diamond matrix; and a working surface. The metallic phase is formed from an infiltrant and a wetting-enhancement layer disposed on the outer surfaces of the diamond particles, with both the infiltrant and wetting-enhancement layer being substantially palladium-free and comprising at least one metal from the group consisting of cobalt, iron, and nickel. The invention also includes a preform for a metal-infiltrated polycrystalline diamond composite tool, the perform comprising a container, a metallic infiltrant source, and a plurality of coated diamonds, each coated with a wetting-enhancement layer and, optionally, an activation layer, both of which are substantially palladium-free. Methods of forming the metal-infiltrated polycrystalline diamond composite tool, the preform, and the coated diamond particles used in the tool are also disclosed.

    Crystalline gallium nitride and method for forming crystalline gallium nitride

    公开(公告)号:AU7729700A

    公开(公告)日:2001-05-10

    申请号:AU7729700

    申请日:2000-09-28

    Applicant: GEN ELECTRIC

    Abstract: A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride; providing mineralizer; providing solvent; providing a capsule; disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell; and subjecting the pressure cell to high pressure and high temperature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.

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