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    EXPANDED THERMAL PLASMA APPARATUS
    3.
    发明申请
    EXPANDED THERMAL PLASMA APPARATUS 审中-公开
    膨胀热等离子体设备

    公开(公告)号：WO2006012179A3

    公开(公告)日：2007-01-18

    申请号：PCT/US2005022185

    申请日：2005-06-22

    Applicant: GEN ELECTRIC ,  MIEBACH THOMAS ,  IACOVANGELO CHARLES DOMINIC ,  MORRISON WILLIAM ARTHUR

    Inventor： MIEBACH THOMAS ,  IACOVANGELO CHARLES DOMINIC ,  MORRISON WILLIAM ARTHUR

    IPC: H05H1/34 ,  C23C16/00

    CPC classification number: H05H1/34 ,  H05H2001/3452 ,  H05H2001/3463

    Abstract: Disclosed herein is an assembly for plasma generation comprising a cathode plate comprising a fixed cathode tip, the cathode tip being integral part of the cathode plate. The assembly further comprises at least one cascade plate, at least one separator plate disposed between the cathode plate and the cascade plate, an anode plate, and an inlet for a gas. The cathode plate, separator plate, cascade plate and anode plate are "electrically isolated" from one another, and the electrically isolated cathode plate, separator plate, and cascade plate define a plasma generation chamber. The cathode tip is disposed within the plasma generation chamber.

    Abstract translation: 本文公开了一种用于等离子体生成的组件，其包括阴极板，阴极板包括固定阴极尖端，阴极尖端是阴极板的整体部分。 组件还包括至少一个级联板，设置在阴极板和级联板之间的至少一个分隔板，阳极板和用于气体的入口。 阴极板，隔板，级联板和阳极板彼此“电隔离”，并且电隔离的阴极板，隔板和级联板限定了等离子体产生室。 阴极尖端设置在等离子体产生室内。

    METAL-INFILTRATED POLYCRYSTALLINE DIAMOND COMPOSITE TOOL FORMED FROM COATED DIAMOND PARTICLES
    4.
    发明申请
    METAL-INFILTRATED POLYCRYSTALLINE DIAMOND COMPOSITE TOOL FORMED FROM COATED DIAMOND PARTICLES 审中-公开
    金属渗透的多晶金刚石复合材料从涂层钻石颗粒形成

    公开(公告)号：WO02068702A3

    公开(公告)日：2003-04-03

    申请号：PCT/US0200733

    申请日：2002-01-09

    Applicant: GEN ELECTRIC

    Inventor： PENDER DAVID CHARLES ,  IACOVANGELO CHARLES DOMINIC ,  D EVELYN MARK PHILIP ,  TYSOE STEVEN ALFRED

    IPC: B23B27/14 ,  B22F1/02 ,  B23B27/20 ,  C04B37/00 ,  C04B41/45 ,  C04B41/51 ,  C04B41/52 ,  C04B41/81 ,  C04B41/88 ,  C04B41/89 ,  C22C1/05 ,  C22C26/00

    CPC classification number: C04B41/009 ,  B22F2998/00 ,  C04B41/4584 ,  C04B41/5133 ,  C04B41/5144 ,  C04B41/52 ,  C04B41/81 ,  C04B41/88 ,  C04B41/89 ,  C22C26/00 ,  Y10T407/27 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/30 ,  Y10T428/31678 ,  C04B41/4523 ,  C04B41/4529 ,  C04B41/4535 ,  C04B41/5012 ,  C04B41/5116 ,  C04B35/52 ,  B22F7/02

    Abstract: A metal-infiltrated polycrystalline diamond composite tool (60) comprising a plurality of diamond grains (22) forming a continuous polycrystalline diamond matrix (56), a metallic phase (62) being substantially palladium-free and contiguous to the continuous polycrystalline diamond matrix (56), wherein the metallic phase (62) interpenetrates the continuous polycrystalline diamond matrix (56) and substantially wets an outer surface of the continuous polycrystalline diamond matrix (56); and a working surface (68). The metallic phase (62) is formed from an infiltrant (44) and a wetting-enhancement layer (24) disposed on the outer surfaces of the diamond particles (22), with both the infiltrant (44) and wetting-enhancement layer (24) being substantially palladium-free and comprising at least one metal from the group consisting of cobalt, iron, and nickel. The invention also includes a preform (40) for a metal-infiltrated polycrystalline diamond composite tool (60), the preform (40) comprising a container (52), a metallic infiltrant source (54), and a plurality of coated diamonds (20), each coated with a wetting-enhancement layer (24) and, optionally, an activation layer (34), both of which are substantially palladium-free. Methods of forming the metal-infiltrated polycrystalline diamond composite tool (60), the preform (40), and the coated diamond particles (20, 30) used in the tool (60) are also disclosed.

    Abstract translation: 金属渗透的多晶金刚石复合工具（60），包括形成连续多晶金刚石基体（56）的多个金刚石晶粒（22），金属相（62）基本上无钯且与连续多晶金刚石基体 56），其中所述金属相（62）互穿所述连续多晶金刚石基体（56）并且基本上润湿所述连续多晶金刚石基体（56）的外表面; 和工作表面（68）。 金属相（62）由渗透剂（44）和设置在金刚石颗粒（22）的外表面上的润湿增强层（24）形成，浸润剂（44）和润湿增强层（24） ）基本上不含钯，并且包含至少一种由钴，铁和镍组成的组中的金属。 本发明还包括用于金属渗透的多晶金刚石复合工具（60）的预成型件（40），所述预制件（40）包括容器（52），金属浸渗源（54）和多个涂层钻石（20 ），每个涂覆有润湿增强层（24）和任选的活化层（34），两者都基本上不含钯。 还公开了在工具（60）中使用的形成金属渗透的多晶金刚石复合工具（60），预成型件（40）和涂覆的金刚石颗粒（20,30）的方法。

    REPLACEABLE PLATE EXPANDED THERMAL PLASMA APPARATUS AND METHOD
    5.
    发明申请
    REPLACEABLE PLATE EXPANDED THERMAL PLASMA APPARATUS AND METHOD 审中-公开
    可更换板膨胀热等离子体装置和方法

    公开(公告)号：WO2005026409A3

    公开(公告)日：2005-05-12

    申请号：PCT/US2004028774

    申请日：2004-09-03

    Applicant: GEN ELECTRIC ,  SCHAEPKENS MARK ,  IACOVANGELO CHARLES DOMINIC ,  MIEBACH THOMAS

    Inventor： SCHAEPKENS MARK ,  IACOVANGELO CHARLES DOMINIC ,  MIEBACH THOMAS

    IPC: C23C16/513 ,  H01J37/32

    CPC classification number: C23C16/513 ,  H01J37/32009 ,  H01J37/32357

    Abstract: A deposition process comprises determining a target process condition within a chamber of an expanding thermal plasma generator (102, 202) for plasma enhanced chemical vapor deposition of a coating on a substrate; the generator (102, 202) comprising a cathode (106, 206), replaceable cascade plate and generators (108, 208) with concentric orifice; and replacing the cascade plate with another plate having a configured orifice to effect the identified target process condition; and generating a plasma at the target process condition by providing a plasma gas to the plasma generator (102, 202) and ionizing the plasma gas in an arc between cathode (106, 206) and generators (108, 208) within the generator (102, 202) and expanding the gas as a plasma onto a substrate in a deposition chamber. A deposition apparatus (100) for generating a controllable plasma; comprises a deposition chamber; adapted to be maintained at subatmospheric pressure; an article support within the deposition chamber; an expanding thermal plasma generator (102, 202) comprising a cathode (106, 206), a single cascade plate and an generators (108, 208) and a communicating orifice through the cascade plate, the orifice having a length of lmm to less than 20mm.

    Abstract translation: 沉积工艺包括确定膨胀热等离子体发生器（102,202）的室内的目标工艺状态，用于等离子体增强化学气相沉积在衬底上的涂层; 发电机（102,202）包括阴极（106,206），可更换的级联板和具有同心孔的发电机（108,208）; 以及用具有配置的孔口的另一个板代替级联板以实现所识别的目标工艺条件; 以及通过向所述等离子体发生器（102,202）提供等离子体气体并使所述等离子体气体在所述发电机（102）内的阴极（106,206）和发电机（108,208）之间的电弧中离子化，从而在目标工艺条件下产生等离子体 ，202）并且将作为等离子体的气体膨胀到沉积室中的衬底上。 一种用于产生可控等离子体的沉积装置（100） 包括沉积室; 适应维持在低于大气压的压力下; 沉积室内的物品支撑; 包括阴极（106,206），单个级联板和发电机（108,208）的膨胀热等离子体发生器（102,202）和通过所述级联板的连通孔，所述孔具有1mm至小于 20mm的

    METHOD AND APPARATUS FOR ARC DEPOSITION
    8.
    发明申请
    METHOD AND APPARATUS FOR ARC DEPOSITION 审中-公开
    ARC沉积的方法和装置

    公开(公告)号：WO0055388A3

    公开(公告)日：2001-06-28

    申请号：PCT/US0003028

    申请日：2000-02-04

    Applicant: GEN ELECTRIC

    Inventor： IACOVANGELO CHARLES DOMINIC ,  BORST KEITH MILTON ,  JERABEK ELIHU CALVIN ,  MARZANO PATRICK PETER ,  YANG BARRY LEE-MEAN

    IPC: B60J1/00 ,  C23C14/08 ,  C23C14/32 ,  C23C16/513 ,  H01J37/32 ,  C23C16/50 ,  B05B7/22 ,  C23C14/22 ,  C23C14/24

    CPC classification number: C23C14/228 ,  C23C14/32 ,  C23C16/513 ,  H01J37/32422

    Abstract: A method and apparatus for depositing a coating on a substrate. A method of coating a substrate comprises evaporating a first reactant (12); introducing the evaporated reactant into a plasma; and depositing the first reactant on a surface of the substrate (20). This method is used to deposit an electrically conductive, ultraviolet filter coating at high rate on a glass or polycarbonate substrate (20). An apparatus (4) for depositing a UV filter coating on a polymeric substrate comprises a plasma generator (10) having an anode (19) and a cathode (13) to form a plasma, and a first inlet (12) for introducing a first reactant into the plasma, the first reactant comprising an evaporated material that is deposited on the substrate (20) by the plasma (50). Optionally, an injection nozzle (18) can be utilized to provide a controlled delivery of the first reactant into the plasma (50).

    Abstract translation: 一种用于在基底上沉积涂层的方法和装置。 涂布基材的方法包括蒸发第一反应物（12）; 将蒸发的反应物引入等离子体; 以及将所述第一反应物沉积在所述衬底（20）的表面上。 该方法用于在玻璃或聚碳酸酯基材（20）上高速沉积导电的紫外线过滤器涂层。 一种用于在聚合物基材上沉积UV过滤器涂层的装置（4）包括具有阳极（19）和阴极（13）以形成等离子体的等离子体发生器（10）和用于引入第一 反应物进入等离子体，第一反应物包含通过等离子体（50）沉积在衬底（20）上的蒸发材料。 任选地，喷嘴（18）可用于提供第一反应物到等离子体（50）的受控输送。

    DEPOSITION OF SILICON DIOXIDE BY PLASMA-ACTIVATED VAPORIZATION PROCESS
    9.
    发明专利
    DEPOSITION OF SILICON DIOXIDE BY PLASMA-ACTIVATED VAPORIZATION PROCESS 失效

    公开(公告)号：JPH1171676A

    公开(公告)日：1999-03-16

    申请号：JP17793298

    申请日：1998-06-25

    Applicant: GEN ELECTRIC

    Inventor： IACOVANGELO CHARLES DOMINIC

    IPC: C23C14/06 ,  C23C14/10 ,  C23C14/32 ,  C23C16/42 ,  C23C16/50 ,  H01L21/31

    Abstract: PROBLEM TO BE SOLVED: To impart resistance to UV deterioriation and wear resistance (scratch resistance) by forming the oxide film modified with a flexible organosilicon by a combination of physical and chemical vapor deposition on a polycarbonate sheet coated with hard silicon. SOLUTION: A polycarbonate sheet 1 is traveled on the upper face of the movable pallet 2 on top of a vacuum chamber, and the silica vaporized by plasma-activated reaction is deposited through the window of the pallet 2. In this case, an electron-beam gun 5 is moved in the axial direction of a rotary drum 4 arranged below the pallet 2, the drum 4 surface is bombarded to vaporize the silica, and the vapor current is passed through the high-density plasma from a multiple hollow cathode plasma source 6. In this case, a uniform plasma density is imparted in the width direction of the sheet 1 by the plasma source 6, and the nitrogen monoxide, organosilicon and/or an oxygen reacting gas supplied from the reactive gas manifolds 7 and 8 are combined with the silica passing through the plasma.

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