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公开(公告)号:WO2015191607A3
公开(公告)日:2016-03-10
申请号:PCT/US2015034938
申请日:2015-06-09
Applicant: GEN ELECTRIC
Inventor: SETLUR ANANT ACHYUT , MURPHY JAMES EDWARD , GARCIA FLORENCIO , CHOWDHURY ASHFAQUL ISLAM , SISTA SRINIVAS PRASAD
CPC classification number: H01L33/502 , C09K11/616 , C09K11/617 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax(M1-z, Mnz)Fy at an elevated temperature with a fluorine-containing oxidizing agent in gaseous form to form the Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and 0.03≤z
Abstract translation: 用于合成Mn4 +掺杂荧光体的方法包括使式I前体,升高温度下的Ax(M1-z,Mnz)Fy与气态的含氟氧化剂接触以形成Mn4 +掺杂荧光体; 其中A为Li,Na,K,Rb,Cs或其组合; M是Si,Ge,Sn,Ti,Zr,Al,Ga,In,Sc,Hf,Y,La,Nb,Ta,Bi,Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y为5,6或7; 0.03≤z<0.10。
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公开(公告)号:WO2015191793A3
公开(公告)日:2016-03-10
申请号:PCT/US2015035222
申请日:2015-06-11
Applicant: GEN ELECTRIC
Inventor: GARCIA FLORENCIO , SETLUR ANANT ACHYUT , MURPHY JAMES EDWARD , SISTA SRINIVAS PRASAD
IPC: C09K11/61
CPC classification number: C09K11/617 , C09K11/616 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H05B33/12 , H01L2924/00012
Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula (I): Ax [MFγ]:Mn4+ at any temperature in a range from about 200°C to about 700°C with a fluorine-containing oxidizing agent in gaseous form; maintaining the temperature during a contact period of at least one hour; and, after the contact period, reducing the temperature at a rate of ≤5°C per minute; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFγ] ion; y is 5, 6 or 7.
Abstract translation: 用于合成Mn4 +掺杂荧光体的方法包括在约200℃至约700℃范围内的任何温度下与气态的含氟氧化剂接触式(I)前体:Ax [MFγ]:Mn4 + ; 在接触期间保持至少1小时的温度; 在接触期后,以每分钟≤5℃的速度降低温度; 其中A为Li,Na,K,Rb,Cs或其组合; M是Si,Ge,Sn,Ti,Zr,Al,Ga,In,Sc,Hf,Y,La,Nb,Ta,Bi,Gd或它们的组合; x是[MFγ]离子的电荷的绝对值; y是5,6或7。
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公开(公告)号:WO2015191521A3
公开(公告)日:2016-02-04
申请号:PCT/US2015034818
申请日:2015-06-09
Applicant: GEN ELECTRIC
Inventor: SETLUR ANAUNT ACHYUT , WEAVER STANTON EARL , GORCZYCA THOMAS BERT , CHOWDHURY ASHFAQUL ISLAM , MURPHY JAMES EDWARD , GARCIA FLORENCIO
CPC classification number: H01L33/504 , C09K11/617 , C09K11/7774 , H01L33/005 , H01L33/502 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2933/0041 , H01L2924/00012
Abstract: A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surafce of a LED chip, The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poIy(meth)acrylate. Ax [MFy]:Mn4+.......... (I), wherein A is Li, Na. K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, AL Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.
Abstract translation: 一种用于制造LED照明装置的方法包括将复合涂层设置在LED芯片的表面上。复合涂层包括具有式I的锰掺杂磷光体的第一复合层和第一粘合剂和包含第二磷光体的第二复合层 组合物和第二粘合剂。 第一粘合剂,第二粘合剂或两者包括一种(甲基)丙烯酸酯。 Ax [MFy]:Mn4 + ..........(I),其中A是Li,Na。 K,Rb,Cs或它们的组合; M是Si,Ge,Sn,Ti,Zr,AlGa,In,Sc,Hf,Y,La,Nb,Ta,Bi,Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y是5,6或7。
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公开(公告)号:MX388627B
公开(公告)日:2025-03-20
申请号:MX2016016393
申请日:2016-12-09
Applicant: GEN ELECTRIC
Inventor: CHOWDHURY ASHFAQUL ISLAM , GARCIA FLORENCIO , GORCZYCA THOMAS BERT , MURPHY JAMES EDWARD , SETLUR ANANT ACHYUT , WEAVER STANTON EARL
IPC: H10H20/851 , C09K11/61 , C09K11/77
Abstract: Un procedimiento para fabricar un aparato de iluminación LED incluye disponer un recubrimiento compuesto sobre una superficie de un circuito integrado de LED; el recubrimiento compuesto comprende una primera capa compuesta que tiene un fósforo dopado en manganeso de fórmula I y un primer aglutinante y una segunda capa compuesta que comprende una segunda composición de fósforo y un segundo aglutinante; el primer aglutinante, el segundo aglutinante o ambos incluyen un poli(met)acrilato; Ax [MFy]:Mn4+; (I), en donde A es Li, Na, K, Rb, Cs, o una combinación de los mismos; M es Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, o una combinación de los mismos; x es el valor absoluto de la carga del ion [MFy]; y es 5, 6 ó 7.
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公开(公告)号:MX387093B
公开(公告)日:2025-03-19
申请号:MX2016008668
申请日:2016-06-29
Applicant: GEN ELECTRIC
Inventor: GARCIA FLORENCIO , LYONS ROBERT JOSEPH , MURPHY JAMES EDWARD , NAMMALWAR PRASANTH KUMAR , HANUMANTHA RAVIKUMAR , SETLUR ANANT ACHYUT
Abstract: Una composición de fósforo se deriva de combinar K2SiF6:Mn4+ en forma sólida con una solución saturada de un fluoruro complejo libre de manganeso que incluye una composición de la fórmula (I):A3[MF6], en donde A se selecciona de Na, K, Rb y combinaciones de los mismos; y M se selecciona de Al, Ga, In, Sc, Y, Gd y combinaciones de los mismos; la composición de la fórmula (I):A3[MF6] tiene una solubilidad en agua inferior a una solubilidad de agua de K2SiF6; un aparato de iluminación que incluye la composición de fósforo también se proporciona.
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公开(公告)号:MY177361A
公开(公告)日:2020-09-14
申请号:MYPI2016703989
申请日:2015-06-12
Applicant: GEN ELECTRIC
Inventor: MURPHY JAMES EDWARD , SETLUR ANANT ACHYUT , GARCIA FLORENCIO , SISTA SRINIVAS PRASAD
Abstract: A process for synthesizing a manganese (Mn4+) doped phosphor includes milling particles of the a phosphor precursor of formula I, and contacting the milled particles with a fluorine-containing oxidizing agent at an elevated temperature Ax[MFy]:Mn4+ ?..(I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.
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公开(公告)号:MX2016016391A
公开(公告)日:2017-05-01
申请号:MX2016016391
申请日:2015-06-11
Applicant: GEN ELECTRIC
Inventor: MURPHY JAMES EDWARD , SETLUR ANANT ACHYUT , GARCIA FLORENCIO , SRINIVAS PRASAD SISTA
IPC: C09K11/61
Abstract: Un proceso para sintetizar un fósforo dopado con Mn4+ de color estable, el proceso incluye poner en contacto un precursor de fórmula I, Ax [MFy]:Mn4+ en cuaqluier temperatura en una escala de aproximadamente 200°C a aproximadamente 700°C con un agente oxidante que contiene flúor en forma gaseosa; mantener la temperatura durante un periodo de contacto de al menos una hora; y después del periodo de contacto, reducir la temperatura a una tasa de =5°C por minuto; en donde A es Li, Na, K, Rb, Cs o una combinación de los mismos; M es Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, o una combinación de los mismos; x es el valor absoluto de la carga del ion [MFy]; y es 5, 6 o 7.
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公开(公告)号:AU2015274858A1
公开(公告)日:2016-12-22
申请号:AU2015274858
申请日:2015-06-09
Applicant: GEN ELECTRIC
Inventor: SETLUR ANAUNT ACHYUT , WEAVER STANTON EARL , GORCZYCA THOMAS BERT , CHOWDHURY ASHFAQUL ISLAM , MURPHY JAMES EDWARD , GARCIA FLORENCIO
Abstract: A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surafce of a LED chip, The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poIy(meth)acrylate. A
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公开(公告)号:CA2952250A1
公开(公告)日:2015-12-17
申请号:CA2952250
申请日:2015-06-09
Applicant: GEN ELECTRIC
Inventor: SETLUR ANANT ACHYUT , MURPHY JAMES EDWARD , GARCIA FLORENCIO , CHOWDHURY ASHFAQUL ISLAM , SISTA SRINIVAS PRASAD
Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax(M1-z, Mnz)Fy at an elevated temperature with a fluorine-containing oxidizing agent in gaseous form to form the Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and 0.03=z
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公开(公告)号:CA2951717A1
公开(公告)日:2015-12-17
申请号:CA2951717
申请日:2015-06-11
Applicant: GEN ELECTRIC
Inventor: GARCIA FLORENCIO , SETLUR ANANT ACHYUT , MURPHY JAMES EDWARD , SISTA SRINIVAS PRASAD
Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula (I): Ax [MF?]:Mn4+ at any temperature in a range from about 200°C to about 700°C with a fluorine-containing oxidizing agent in gaseous form; maintaining the temperature during a contact period of at least one hour; and, after the contact period, reducing the temperature at a rate of =5°C per minute; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF?] ion; y is 5, 6 or 7.
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