Abstract:
An electron emissive material includes a composition including a metal oxide, where the metal oxide is at least one oxide of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, Sc, Hf, or Zr, or any combinations thereof, where the metal oxide is present in a quantity that ranges from about 20 % to 100 % by weight of the total composition, where the composition is operable to emit electrons in a discharge medium in response to a thermal excitation, wherein the discharge medium under steady state operating conditions producing a total vapor pressure of less than about 2x10 5 Pa. A lamp including an envelope, an electrode including an electron emissive material and a discharge medium, is also disclosed.
Abstract:
An ionizable mercury-free and sodium-free composition is capable of emitting radiation if excited. A radiation source includes such an ionizable mercury-free and sodium-free composition. The ionizable mercury-free and sodium-free composition includes at least a metal, a metal and a metal compound, or a metal compound.
Abstract:
PROBLEM TO BE SOLVED: To provide a compact electrodeless fluorescent lamp which can be lighted by an incandescent lamp fitting appliance. SOLUTION: This lamp has, an envelope which is air-tight and translucent has an A-line shape terminated in a thin end part 24 continued from a spherical upper side part to a gradually thinned lower side part, the inside is filled with a filling material to keep arc electric discharge by alternating magnetic field application, and the inner face is coated with a phosphor coating 18 to emit visible light when the phosphor coating is excited by ultraviolet rays by the arc electric discharge. In the envelope, a recessed part 26 is installed, an exciting coil 28 to generate an alternating magnetic field when excited by AC energy source is installed in the recessed part of the envelope, a ballast 30 is at least partly housed in the recessed part, and a base 16 is connected to the thin end part of the envelope.
Abstract:
A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.
Abstract:
In einem Aspekt der vorliegenden Erfindung wird ein Verfahren bereitgestellt. Das Verfahren schließt das Anordnen einer im Wesentlichen amorphen Cadmiumzinnoxid-Schicht auf einem Träger und das rasche thermische Erhitzen der im Wesentlichen amorphen Cadmiumzinnoxid-Schicht durch Aussetzen einer ersten Oberfläche der im Wesentlichen amorphen Cadmiumzinnoxid-Schicht gegenüber einer elektromagnetischen Strahlung ein, um eine transparente Schicht zu bilden. Es wird auch ein Verfahren zum Herstellen einer photovoltaischen Vorrichtung bereitgestellt.
Abstract:
ELECTRODE, PHOTOVOLTAIC DEVICE, AND METHOD OF MAKING [0080] In one aspect of the present invention, a transparent electrode, is presented. The transparent electrode includes a substrate and a transparent layer disposed on the substrate. The transparent layer includes (a) a first region including cadmium tin oxide; (b) a second region including tin and oxygen; and (c) a transition region including cadmium, tin, and oxygen interposed between the first region and the second region, wherein an atomic ratio of cadmium to tin in the transition region varies across a thickness of the transition reg: on. The second region further has an electrical resistivity greater than an electrical resistivity of the first region. A photovoltaic device, a photovoltaic module, a method of making is also presented. 320 . . . . . . . . . . . . 301-20 201--
Abstract:
A compact electrodeless fluorescent lamp (20) has an A-line configuration including a globular upper portion (22) which becomes narrower toward a lower position, terminating in a narrow end (24). The narrow end of the A-line envelope is connected to a base (16). The alternating current energy source is electrically connected through the base, via a ballast (30) to the excitation coil (28). The ballast is integral with the lamp and is contained, at least partially, within the reentrant cavity (26).
Abstract:
A compact electrodeless fluorescent lamp (20) has an A-line configuration including a globular upper portion (22) which becomes narrower toward a lower position, terminating in a narrow end (24). The narrow end of the A-line envelope is connected to a base (16). The alternating current energy source is electrically connected through the base, via a ballast (30) to the excitation coil (28). The ballast is integral with the lamp and is contained, at least partially, within the reentrant cavity (26).
Abstract:
A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.
Abstract:
método para fabricar um dispositivo semicondutor, dispositivos de transistor de efeito de campo de óxido de metal (mosfet) e semicondutor. trata-se de um dispositivo semicondutor e métodos para fabricar esse dispositivo. em determinadas realizações, o dispositivo semicondutor inclui um eletrodo fonte formado com o uso de um metal que limita um deslocamento, tal como devido à instabilidade em temperatura e polarização, em uma tensão limite do dispositivo semicondutor durante a operação. em determinadas realizações o dispositivo semicondutor pode ser baseado em carboneto de silício