公开(公告)号：WO2007067407A3

公开(公告)日：2007-11-22

申请号：PCT/US2006045852

申请日：2006-12-01

Applicant: GEN ELECTRIC ,  LIU JIE ,  CELLA JAMES ANTHONY ,  YAN MIN ,  DUGGAL ANIL RAJ ,  HERZOG MICHAEL SCOTT ,  ROGOJEVIC SVETLANA ,  PARTHASARATHY GAUTAM

Inventor： LIU JIE ,  CELLA JAMES ANTHONY ,  YAN MIN ,  DUGGAL ANIL RAJ ,  HERZOG MICHAEL SCOTT ,  ROGOJEVIC SVETLANA ,  PARTHASARATHY GAUTAM

IPC: H01L51/52

CPC classification number: H01L51/5048 ,  H01B1/06 ,  H01L51/0059 ,  H01L51/5221 ,  H01L2251/5323 ,  H05B33/28 ,  Y10T428/31938

Abstract: Described herein is a transparent electrode comprising at least one optically transparent electrically conductive layer; and at least one optically transparent intermediate layer, wherein said optically transparent conductive layer is in contact with said optically intermediate layer, and wherein said optically transparent conductive layer and said optically transparent intermediate layer together transmit at least 50 percent of incident light having a wavelength in a range between about 200 and about 1200 nanometers, said optically transparent conductive layer having a bulk conductivity at least 100 Siemens per centimeter (S/cm), said optically transparent intermediate layer being comprised of a material having a bulk electrical conductivity at room temperature less than 10 -12 Siemens per centimeter and a band gap of 3.5 eV. Described herein are also methods for forming a transparent electrode, and transparent electronic devices comprising at least one transparent electrode.

Abstract translation: 本文描述的是包括至少一个光学透明导电层的透明电极; 以及至少一个光学透明中间层，其中所述光学透明导电层与所述光学中间层接触，并且其中所述光学透明导电层和所述光学透明中间层一起将具有波长的入射光的至少50％ 在约200和约1200纳米之间的范围内，所述光学透明导电层的体积电导率至少为100西门子每厘米（S / cm），所述光学透明中间层由在室温下具有体积电导率的材料组成 每厘米超过10西门子，3.5V的带隙。 这里也描述了形成透明电极的方法和包括至少一个透明电极的透明电子器件。

公开(公告)号：DE102012100259A1

公开(公告)日：2012-07-19

申请号：DE102012100259

申请日：2012-01-12

Applicant: GEN ELECTRIC

Inventor： ZHONG DALONG ,  NARDI RICHARD ARTHUR JR ,  PARTHASARATHY GAUTAM

IPC: C23C14/34 ,  C23C14/06

Abstract: Ein Aspekt der vorliegenden Erfindung stellt ein Verfahren zum Herstellen eines Filmes bereit. Das Verfahren schließt das Bereitstellen eines ein Sulfid umfassenden Targets in einer sauerstofffreien Umgebung, das Anwenden einer Vielzahl von Gleichstromimpulsen auf das Target zum Erzeugen eines impulsförmigen Gleichstromplasmas, das Zerstäuben des Sulfidtargets mit dem impulsförmigen DC-Plasma zum Auswerfen eines Schwefel umfassenden Materials in das Plasma und das Abscheiden eines das ausgeworfene Material umfassenden Films auf einem Träger ein. Ein anderer Aspekt der vorliegenden Erfindung umfasst ein Verfahren zum Herstellen einer photovoltaischen Vorrichtung.

公开(公告)号：AU2011226881A1

公开(公告)日：2012-04-19

申请号：AU2011226881

申请日：2011-09-26

Applicant: GEN ELECTRIC

Inventor： ZHONG DALONG ,  PARTHASARATHY GAUTAM ,  NARDI JR RICHARD ARTHUR

IPC: H01L31/02 ,  H01L31/0272 ,  H01L31/18

Abstract: PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING One aspect of the present invention provides a device that includes a substrate; a first semiconducting layer; a transparent conductive layer; a transparent window layer. The transparent window layer includes cadmium sulfide and oxygen. The device has a fill factor of greater than about 0.65. Another aspect of the present invention provides a method of making the device. Placing a substrate/superstrate in the deposition environment 12 Placing a target within an environment of oxygen 14 Applying a plurality of direct current pulses to the target 16 to obtain a pulsed direct current plasma Sputtering the target with the a pulsed direct current plasma 18 to eject a material comprising cadmium and sulfur into the plasma Depositing a film of the material comprising cadmium 20 and sulfur on to the substrate/superstrate

公开(公告)号：AU2011226902A1

公开(公告)日：2012-04-19

申请号：AU2011226902

申请日：2011-09-27

Applicant: GEN ELECTRIC

Inventor： ZHONG DALONG ,  PARTHASARATHY GAUTAM ,  NARDI JR RICHARD ARTHUR

IPC: C23C14/34 ,  H01L31/18

Abstract: PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING One aspect of the present invention provides a method to make a film. The method includes 5 providing a target comprising a semiconductor material within an environment comprising oxygen; applying a plurality of direct current pulses to the target to create a pulsed direct current plasma; sputtering the target with the pulsed direct current plasma to eject a material comprising cadmium and sulfur into the plasma; and depositing a film comprising the material onto a substrate. The target includes a semiconductor material that comprises semiconductor 0 material comprises cadmium and sulfur. CdS ------ CdS:O (20%) ........-. CdS:O (20%) - Annealed --- CdS:O (10%) - CdS:O (10%) - Annealed - 0.6 c 0.5 300 350 400 450 500 550 600 650 700 750 800 850 900 Wavelength (nm) y 200 nm Microcrystalline Amorphous